Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode

Bekaddour, Abderrahmane; Rabehi, Abdelaziz; Tizi, S.; Zebentout, Baya; Akkal, B.; Benamara, Z.

doi:10.1016/j.micrna.2022.207464

Cited by 3 publications

(1 citation statement)

References 26 publications

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“…𝐼 𝑜 = 𝑇 2 𝐴 0 𝐴exp( 𝑞ф 𝑘𝑇 ) (6) Where ф is the Schottky barrier height, A and A 0 are rectifier and Richardson constants respectively. The decrease in barrier height and upswing in ideality factor with temperature is in agreement with thermionic emission theory as corroborated by Abubakar (2016) but contrary to the findings of (Bekaddour et al 2023;Adoun et al 2019) where they signify abnormal characteristic in the barrier height and ideality factor with increase in temperature according to their findings, the deviation from the thermionic is as a result of atomic interaction and homogeneous nature of the metal semiconductor interface. The deviation from the thermionic emission is as a result of atomic interaction and inhomogeneous nature of the metal semiconductor interface (Bekaddour et al, 2023;Adoun et al, 2019).…”

Section: Barrier Height Ideality Factor and Temperaturesupporting

confidence: 85%

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Garba,

Nasiru,

Abubakar

et al. 2024

dujopas

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This paper gives an insight into the need for radiation detection and the most commonly flexible and efficient radiation detector. It also examines bulk characteristics of 4H-SiC semiconductor radiation detector with Ni and Ti as metals for the contact. Bulk characterization of the device, including: doping concentration, electrons and holes behaviors, space charge and current densities were carried out. The modeling is conducted using Sentaurus Technology Computer Aided Design (TCAD) to examine charge transport in bulk 4HSiC material. Data obtained were further analyzed through Sentaurus visual, sentaurus Techplot and Excel to clearly determine the characteristics of the device. It is observed that when the semiconductor and metal are in contact, the Fermi-level is established where the doping concentration varied with either magnitude of the doping concentration or nature of the dopant. Similarly, Schottky and ohmic contacts and temperature effect were observed from the device characteristics which demonstrate that, the detector can withstand a temperature from the range of 100K to 700K in no fluctuating state.

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Section: Barrier Height Ideality Factor and Temperaturesupporting

confidence: 85%

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Garba,

Nasiru,

Abubakar

et al. 2024

dujopas

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An experimental study: Dependence of Schottky diode parameters on Schottky contact area size

Efeoǧlu

Türüt²,

Gül

2023

Optical Materials

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Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes

Efeoǧlu

Türüt²

2023

Journal of Vacuum Science &Amp; Technology B

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We have discussed the thermal sensing capability under a constant current level and current versus voltage ( I–V) traces by measuring the temperature of high series resistance Pt/ n-GaP/Al/Ti Schottky structures in the 100−320 K range. The Rs values of 35 Ω and 4.50 × 103 kΩ for the device have been determined from I–V traces at 320 and 100 K, respectively. The thermal sensing ( V–T) curves are expected to give a straight line at each current level. However, the V–T curves have deviated upward from linearity due to the high Rs value of the device after a certain temperature. The deviation point from linearity in V–T traces shifts to higher temperatures with an increase in bias voltage and current level. Thereby, the straight-line interval portion of the V–T curve has become too small with an increase in the current value. The thermal sensing coefficient α changed from 2.49 mV/K at 10 μA to 3.21 mV/K at 0.50 nA. Therefore, it has been concluded that the Pt/ n-GaP/Al/Ti Schottky barrier (SB) is preferable for thermal sensor applications at the small current levels of 0.50, 1.0, 2.0, and 10.0 nA with high sensitivity up to a minimum temperature of 100 K. From I–V curves, [Formula: see text] and ideality factor values have ranged from 1.200 eV and 1.066 at 320 K to 0.854 eV and 1.705 at 100 K. It has been reported in the literature that the large SB height leads to a better temperature response.

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Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode

Cited by 3 publications

References 26 publications

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

An experimental study: Dependence of Schottky diode parameters on Schottky contact area size

Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes

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