2020
DOI: 10.1007/s10904-019-01429-0
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Effect of the applied potential condition on the photocatalytic properties of Fe2O3|WO3 heterojunction films

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Cited by 19 publications
(7 citation statements)
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“…The respective onset potentials (vs. Ag-AgCl) of the WW6 and WU6 photoanodes are 0.41 V and 0.28 V in the presence of SO 3 2– and 0.50 V and 0.48 V in the absence of SO 3 2– , respectively. This is consistent with previous reports on WO 3 -based electrodes ( Ng et al, 2012 , Gomis-Berenguer et al, 2018 , Patil and Patil, 1996 , Costa et al, 2020 , Núñez et al, 2019 ).
Fig.
…”
Section: Resultssupporting
confidence: 94%
“…The respective onset potentials (vs. Ag-AgCl) of the WW6 and WU6 photoanodes are 0.41 V and 0.28 V in the presence of SO 3 2– and 0.50 V and 0.48 V in the absence of SO 3 2– , respectively. This is consistent with previous reports on WO 3 -based electrodes ( Ng et al, 2012 , Gomis-Berenguer et al, 2018 , Patil and Patil, 1996 , Costa et al, 2020 , Núñez et al, 2019 ).
Fig.
…”
Section: Resultssupporting
confidence: 94%
“…Therefore, the E fb value of the semiconductor gives us the position of one of the two bands, whereas the E bg value indicates the position of the other. 77 Here, the E fb values were determined using a similar methodology to that earlier adopted by our research group 76,78 , the Butler-Gärtner model (ie, the variation of the current square). This model assumes that the photocurrent (I ph ) is observed only when the electrode potential is more positive than the semiconductor flat band potential (ie, when E > E fb and I ph > 0).…”
Section: Photoelectrochemical Investigationmentioning
confidence: 99%
“…The potential of the flat band is referred to as the flat-band potential ( E FB ) and corresponds to the CB of the photocatalyst ( E CB ). The difference between E CB and E FB depends on the effective density of charges ( N D ) and density of states in the CB ( N CB ) as follows E CB E FB = kT e ln N normalD N CB N CB = 2 true( 2 π m e italickT h 2 true) 3 / 2 where k is the Boltzmann constant, T is the temperature, e is the charge of electron, m e is the effective mass of electron in the semiconductor, and h is the Planck constant.…”
Section: Introductionmentioning
confidence: 99%
“…22 The potential of the flat band is referred to as the flat-band potential (E FB ) and corresponds to the CB of the photocatalyst (E CB ). The difference between E CB and E FB depends on the effective density of charges (N D ) and density of states in the CB (N CB ) as follows 23 where k is the Boltzmann constant, T is the temperature, e is the charge of electron, m e is the effective mass of electron in the semiconductor, and h is the Planck constant. Several (photo)electrochemical methods can be employed for the determination of the flat-band potential in semiconducting photocatalysts.…”
Section: ■ Introductionmentioning
confidence: 99%