Effect of the annealing process on electrical and optical properties of SnO 2 /Ag/SnO 2 nanometric multilayer film

Liu, Lingyun; Ma, Shanshan; Wu, Hao; Zhu, Bo; Yang, Huimin; Tang, Jieying; Zhao, Xiaolei

doi:10.1016/j.matlet.2015.02.093

Cited by 43 publications

(22 citation statements)

References 13 publications

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“…These structures have better optical and electrical properties than a single-layer TC film, and higher optical transparency and chemical stability than a single-layer metal film. Many sandwich structures have been reported, such as AZO/Au/ AZO [13,14], ITO/Au/ITO [15,16], ZnS/Ag/ZnS [17,18], ZnO/Au/ZnO [19], SnO 2 /Ag/SnO 2 [20], and AZO/Ni/AZO [21].…”

Section: Introductionmentioning

confidence: 99%

Photoelectric properties of ZnS/Au/ZnS transparent conductive tri-layer films

Wang

2017

Optics & Laser Technology

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Section: Introductionmentioning

confidence: 99%

Photoelectric properties of ZnS/Au/ZnS transparent conductive tri-layer films

Wang

2017

Optics & Laser Technology

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“…Under such conditions, Hall concentration could be fixed by adjusting the thickness of the Ag layer, meanwhile, mobility can be optimized as increasing post-annealing temperature as shown in Fig. 5, and it is reported that as post annealing temperature increased, Ag films becomes crystallized, thanks to grain growth in Ag layers the grain boundary's carriers scattering decreased and consequently the mobility increased [8], As a conclusion, post-annealing is a simple and effective method to control the electrical properties of the ISO/Ag/ISO multilayer. …”

Section: Resultsmentioning

confidence: 99%

Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

Yu¹,

Lee²

2016

Transactions on Electrical and Electronic Materials

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Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10 -5 Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10 -5 Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

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“…Indium tin oxide (ITO)/metal/ITO (IMI), aluminum-doped zinc oxide (AZO)/metal/AZO (ZMZ), fluorine-doped tin oxide (FTO)/metal/FTO (FMF), and so forth as the most popular transparent conductive oxides (TCO)/metal/transparent conductive oxide TCO (TMT) have been widely studied [1][2][3][4][5][6][7][8][9][10][11][12][13]. Because the transparent conductive properties of TMT depended mainly on the metal layer [1,9,[14][15][16], a variety of researches on TMT focused on the metal layer [2,[17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

“…Because the transparent conductive properties of TMT depended mainly on the metal layer [1,9,[14][15][16], a variety of researches on TMT focused on the metal layer [2,[17][18][19][20][21][22]. Generally, the thickness of metal layer was about 8-14 nm [1] because the too thick metal layer made the light transmittance decrease while the too thin one did not form a continuous layer and made the electrical conductivity decrease dramatically.…”

Section: Introductionmentioning

confidence: 99%

Spreadability of Ag Layer on Oxides and High Performance of AZO/Ag/AZO Sandwiched Transparent Conductive Film

Niu

Liu

et al. 2017

Journal of Nanoscience

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Single layers of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), and Ag, bilayers of ITO/Ag and AZO/Ag, and sandwiched layers of ITO/Ag/ITO (IAI) and AZO/Ag/AZO (ZAZ) were fabricated on ordinary glass substrates using magnetron sputtering. The surface morphologies of single layers and bilayers were measured. The sheet resistance and transmittance of the sandwiched layers were investigated. The results showed that the spreadability of the Ag on the AZO was significantly better than that on the ITO or bare glass substrate. The spreadability of Ag on underlayers influences obviously the performance of transparent conductive oxide/Ag/transparent conductive oxides (TCO/Ag/TCO or TAT). The sheet resistance and transmittance of the ZAZ sandwiched layer with the matching of 35 nm AZO (35 nm)/Ag (9 nm)/AZO (35 nm) fabricated in this paper were low to 3.84 Ω/sq and up to 85.55% at 550 nm, respectively. Its maximum Haacke figure of merit was 0.05469 Ω −1 , higher than that of IAI multilayer.

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Effect of the annealing process on electrical and optical properties of SnO 2 /Ag/SnO 2 nanometric multilayer film

Cited by 43 publications

References 13 publications

Photoelectric properties of ZnS/Au/ZnS transparent conductive tri-layer films

Photoelectric properties of ZnS/Au/ZnS transparent conductive tri-layer films

Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

Spreadability of Ag Layer on Oxides and High Performance of AZO/Ag/AZO Sandwiched Transparent Conductive Film

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