Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

Türüt, A.; Karabulut, Abdulkerim; Efeoǧlu, Hasan

doi:10.1007/s10854-021-06753-1

Cited by 7 publications

(4 citation statements)

References 67 publications

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“…To investigate the conduction mechanism in AlB10 and facilitate the development of filmbased devices with an Al-AlB10-nSi structure, the current-voltage characteristics (I-V curves) were examined [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: The Methodology and Experimental Resultsmentioning

confidence: 99%

“…the Фb0 values for the asdeposited and MIS diode were found as 0.77 and 0.73 eV at 300 K. That is, the Фb0 value for the D1 MIS diode at 300 K is lower than that for the as deposited. The case may be ascribed to the passivation effect of the Al2O3 thin film on interface defects to improve the interface inhomogeneity [9,10,12,33,[15][16][17][18][19][20]. They [22] experimentally found that the Фb0 value decreased with increase in the interfacial Al2O3 thinfilm thickness from as-deposited diode to 2 nm over whole test temperature (five different temperatures).…”

Section: Discussionmentioning

confidence: 98%

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Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Sultanov,

Mirzajonov,

Yusupov

2023

E3S Web of Conf.

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Currently, the usage of electronic devices with diverse applications is prevalent in numerous commercial, industrial, electrical, and military sectors. The development of new semiconductors is essential for the advancement of highly sensitive, fast-responding, multifunctional, and high-precision devices and installations. Thin films based on semiconductor monocrystalline substrates are being obtained by scientists in leading research centers worldwide. Production technologies are being improved, optimal conditions are being determined, and the structural and unique physical properties of the obtained thin films are being studied. Additionally, research is being conducted to broaden the light absorption spectra of gas, temperature, and pressure-sensitive heterostructures. In this work, the results of a low-temperature technology development for obtaining films of refractory materials based on the presence of the eutectic state in boron-metal oxide systems are presented. The electro-physical properties of the obtained AlB10 films are investigated over a wide temperature range. The discussion revolves around the development of the technology for manufacturing metal-dielectric-metal (MDM) structures based on AlB10. The results of investigating the volt-ampere characteristics (VAC) of Ni-AlB10-Ni and Al-AlB10-n-Si structures are presented. The method employed for obtaining AlB10 films involves thermal evaporation of a B+Al2O3 mixture in a vacuum at a temperature of 1350-1400°C.

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Section: The Methodology and Experimental Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 98%

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Sultanov,

Mirzajonov,

Yusupov

2023

E3S Web of Conf.

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“…In order to determine the performances of the two fabricated photodiodes, current-voltage measurements were carried out under different light intensities and dark conditions. There are different approaches that can be effective in the current conduction mechanism in such devices, and the important ones can be listed as follows: thermionic emission, thermionic field emission, and tunneling of electronic charges [37,38]. Some of these are considered insignificant, while others may be dominant.…”

Section: Devices Characterizationmentioning

confidence: 99%

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Yıldız,

Karabulut,

Yıldırım

et al. 2024

Phys. Scr.

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This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on theelectrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p Si devices were produced by coating both materia- ls between the semiconductor and the metal using the RF sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by X-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current-voltage and transient photocurrent measurements were performed and analyzed under different light intensities. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current-voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. Additionally, the results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

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“…A Gaussian distribution of the Schottky barrier over the contact area has been also assumed to describe the inhomogeneities [15]. Several approaches have been adopted to reduce interface states including the insertion of an interfacial layer between the metal and the semiconductor [16][17][18]. Other treatments were also considered.…”

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confidence: 99%

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Lakhdari¹,

Sengouga²,

Labed³

et al. 2022

Semicond. Sci. Technol.

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Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I-V and C-V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I-V and C-V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C-V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

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Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

Cited by 7 publications

References 67 publications

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

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Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

Cited by 7 publications

References 67 publications

Technology of production and photoelectric characteristics of AlB10 heterojunctions based on silicon

Technology of production and photoelectric characteristics of AlB10 heterojunctions based on silicon

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

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Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon