Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

This investigation addressed an AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor ͑pHEMT͒, incorporating double ␦-doping carrier supply layers and a composite channel, grown by metallorganic chemical vapor deposition ͑MOCVD͒. The AlGaAs/InGaAs/GaAs pHEMT was fully characterized. When dc was applied, the device had a maximum drain current ͑I D,max ͒ of 302 mA/mm, a peak extrinsic transconductance ͑g m,peak ͒ of 186 mS/mm, and a gate-to-drain breakdown voltage of 27.7 V. At RF, the f T of the device was 16.92 GHz with an extrapolated f max of 37.37 GHz. Furthermore, this transistor underwent high-temperature tests. At high temperature, the device fabricated from the composite-channel structures still performed excellently.The wireless communication sector is expanding and the demand for such high-speed and high-power transistor applications as phased array antennas and base stations is great. Performance specifications are becoming stricter. Earlier high electron mobility transistors ͑HEMTs͒ exploited the AlGaAs/GaAs system. 1 Conventional AlGaAs/GaAs HEMTs outperform metal-semiconductor field-effect transistors ͑MESFETs͒ in noise behavior and high-frequency characteristics. 2 Then, other material systems have been presented and investigated. One method of improving the conventional AlGaAs/GaAs HEMT is to replace the GaAs channel with an InGaAs channel, forming a pHEMT, where p stands for pseudomorphic. The benefits of exploiting a thin InGaAs layer as the pseudomorphic channel in pHEMT is the great conduction-band discontinuity at AlGaAs/InGaAs heterointerface, the improvement in the confinement of carriers in the channel, and improved electron transport. 3 Advances in AlGaAs/InGaAs pHEMTs have led to their preference over conventional AlGaAs/GaAs HEMTs in microwave applications. 4,5 GaAs-based pHEMTs and heterojunction bipolar transistors ͑HBTs͒ 6,7 are presently the preferred devices in portable transmitting operations. The brilliance of these device technologies lies principally in their special features. HEMTs and HBTs have become realizable with the advent of advanced epitaxial technology. The two favored techniques for growing HBT and HEMT epitaxial layers are metallorganic chemical vapor deposition ͑MOCVD͒ 8,9 and molecular beam epitaxy ͑MBE͒, 10-12 because these schemes can reproduce the atomically thin layers demanded by these device structures. The main strengths of MOCVD are high throughput and multiwafer growth. In this respect, the MOCVD technique scheme is preferred to MBE. Strong progress in growth techniques has spawned myriad innovative electronic materials and devices. 13,14 Moreover, the use of the ␦-doping technique in HEMTs has markedly attracted attention. ␦-Doping in HEMTs has been established to be much more effective than homogeneous doping. 15-17 These advantages of ␦-doping led to ͑i͒ increased electron mobility, ͑ii͒ increased two-dimensional electron ͑2DEG͒ concentration, ͑iii͒ increased breakdown voltage, and ͑iv͒ diminished parallel conduction.A great effort has been...

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“…24,32 The threshold voltage and the drain current ͑close to pinch-off͒ are related to each other. As presented in Fig.…”

Section: H952mentioning

confidence: 99%

Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

Lin

Chen

2007

J. Electrochem. Soc.

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“…GaAs-based devices such as high electron mobility transistors (HEMTs) have been extensively used in high-performance microwave and power circuits [1][2][3]. In order to further improve the device performance, the surface and interface characteristics should be considered more carefully.…”

Section: Introductionmentioning

confidence: 99%

On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)

Huang

Chen

Cheng

et al. 2011

Solid-State Electronics

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“…Also, for the improvement of gate turn-on voltage, the npn depletion in the camel-like gate provides higher potential barrier height than the conventional M-S gate structure [6][7][8]. On the other hand, delta-doped field-effect transistors have been demonstrated to substantially improve the linearity of transfer characteristics due to the high two-dimensional electron gas, good carrier confinement, and ease control of threshold voltage [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Tsai

Lour

Huang

et al. 2010

Solid-State Electronics

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Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

Cited by 15 publications

References 26 publications

Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

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