Effect of temperature and improving the optoelectrical attributes of copper gallium sulfide (CuGaS₂) thin films

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

“…The resistivity of Cr-doped CGS decreases from 8.83 to 1.60 Ω cm compared to pure CGST thin film. This change in electrical resistivity can be attributed to alterations in carrier concentration, measured at 4.40 Â 10 16 cm À3 [3,20,22,60]. As anticipated, electron mobility experiences a notable decline with increasing Cr doping concentration, potentially due to VB fluctuations caused by heightened disordering induced by Cr in the alloy and augmented impurity scattering due to Cr ions.…”

“…The presence of the sub‐bandgap associated with Cr‐substituted CGST films may result in an enhanced current generation at the voltage corresponding to the energy gap value, as explained in the simulation section. [ 3,19,51,52 ]…”

“…The presence of the sub-bandgap associated with Cr-substituted CGST films may result in an enhanced current generation at the voltage corresponding to the energy gap value, as explained in the simulation section. [3,19,51,52] The determination of the optical bandgap for the thin films involves extrapolating the linear segment of the graph to the photon energy (hν) axis, using Tauc's equation. [5] As depicted in Figure 3, the application of Tauc's method reveals that the bandgap for the pure CGST film equals 2.40 eV.…”

“…It exhibits p-type conductivity and possesses a direct bandgap of 2.4 eV, creating IB among chalcopyrite semiconductors. [1,3,[19][20][21][22] However, the bandgap plays a crucial role in determining the absorption characteristics of a solar cell. To modify the bandgap of CuGa(S,Te) 2 , it can be doped with various transition elements.…”

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

“…5 These intermediate levels exist as specific energy levels or sub-bands distinct from the conduction and valence bands, and this process yields a theoretical limit similar to that of multiple-level tandem solar cells, reaching up to 63% efficiency at high concentrations. 6–8…”