Effect of Tellurium Doping on the Thermoelectric Properties of ZnSb

Ueda, Takashi; Okamura, Chinatsu; Noda, Yasutoshi; Hasezaki, Kazuhiro

doi:10.2320/matertrans.m2009201

Cited by 25 publications

(21 citation statements)

References 9 publications

(8 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 Melt-growth and powder-metallurgy methods have been used to prepare b-Zn 4 Sb 3 materials. [5][6][7][8][9][10] b-Zn 4 Sb 3 crystals prepared by conventional melt growth contain many cracks that result from thermal stress because of c-to b-phase transformations. Recently, a crack-free single-phase b-Zn 4 Sb 3 material was obtained using direct melting followed by a two-stage heat treatment, also being reported elsewhere.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, a crack-free single-phase b-Zn 4 Sb 3 material was obtained using direct melting followed by a two-stage heat treatment, also being reported elsewhere. 10 Finely grained powder-metallurgical processes such as mechanical alloying (MA) and mechanical grinding (MG) have been used to obtain homogeneous materials. [11][12][13][14] In general, fine-grain-size materials have lower thermal conductivities than single crystals of the same materials because phonons can be scattered at grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method

Okamura

Ueda

Hasezaki

2009

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Single-phase b-Zn 4 Sb 3 materials were prepared by mechanical grinding (MG). Source materials for the Zn 4 Sb 3 ingots were prepared using three different processes after the direct melting of constituent elements. In process 1, the ingot was obtained by quenching the melt in water within an evacuated quartz ampoule. In process 2, the ingot was heat-treated for 100 h at 723 K after process 1. In process 3, the ingot was heat-treated for a total of 200 h in two stages at 723 K and 673 K after process 1. The resultant ingots were mechanically ground and sintered at 623 K by hot pressing. The sintered materials were characterized by x-ray diffraction, differential thermal analysis (DTA), and thermoelectric property measurements. The thermal conductivity of the sintered materials was 0.88 W m À1 K À1 at room temperature, being slightly lower than that reported for the materials prepared by a conventional method. Results indicate that the dimensionless figure of merit of the single-phase b-Zn 4 Sb 3 ranged from 1.06 to 1.31 at 573 K.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method

Okamura

Ueda

Hasezaki

2009

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, it has been reported that it is possible to reduce successfully the thermal conductivity of ZnSb by nanostructuring [18,19] and increase its zT up to about 1 [19]. It has also been reported that the n-doped compound with tellurium can have similar electronic properties (and hence zT) to the p-doped material [20] (recent experimental studies have explored other n-type doping but without significant success [21]). These recent results open new perspectives for the orthorhombic ZnSb compound without the stability and doping problems of Zn 4 Sb 3 .…”

Section: Introductionmentioning

confidence: 99%

Physical properties of thermoelectric zinc antimonide using first-principles calculations

et al. 2012

View full text Add to dashboard Cite

Abstract:We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the thermoelectric properties of this already very promising thermoelectric material.Concerning the electronic properties, in addition to the band structure, we show that the Zn (Sb) crystallographically equivalent atoms are not exactly equivalent from the electronic point of view. Lattice dynamics, elastic and thermodynamic properties are found to be in good agreement with the experiments and they confirm the non equivalency of the zinc and antimony atoms from the vibrational point of view. The calculated elastic properties show a relatively weak anisotropy and the hardest direction is the y direction. We observe the presence of low energy modes involving both Zn and Sb atoms at about 5-6 meV, similarly to what has been found in Zn 4 Sb 3 and we suggest that the interactions of these modes with acoustic phonons could explain the relatively low thermal conductivity of ZnSb. Zinc vacancies are the most stable defects and this explains the intrinsic p-type conductivity of ZnSb.

show abstract

“…[2][3][4][5][6][7] Telkes has investigated the production of solar thermoelectric generators using p-type ZnSb. [2][3][4][5] However, according to reports in the available literature, 9,10) preparation of single-phase ZnSb has proved to be difficult.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

2010

Self Cite

View full text Add to dashboard Cite

Single-phase zinc antimonide (ZnSb) was prepared using a mechanical grinding (MG) process. The ZnSb source ingots were prepared by direct melting of the constituent elements. Two processes were used to prepare the ingots. One of the processes involved quenching the molten material in water in an evacuated quartz ampoule. In the other process, an additional step consisting of heating for 100 h at 723 K was performed after quenching. The ground materials were obtained by mechanically grinding the resultant ingots and then hot-pressing at 673 K. The materials were characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), and thermoelectric property measurements. The results indicated that the materials were crack free and single phase. The thermal conductivity of the ground materials was 1.41 Wm À1 K À1 at room temperature. This value was lower than that reported in the available data for materials prepared by conventional melt growth and powder metallurgy methods. The ZnSb single phase was found to have a dimensionless figure of merit of 0.6-0.8 at 573 K.

show abstract

Effect of Tellurium Doping on the Thermoelectric Properties of ZnSb

Cited by 25 publications

References 9 publications

RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method

RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method

Physical properties of thermoelectric zinc antimonide using first-principles calculations

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

Contact Info

Product

Resources

About