Effect of target temperature on the reactive d.c.-sputtering of silicon and niobium oxides

Chau, R.; Ho, W. J.; Wolfe, J. C.; Licon, D.L.

doi:10.1016/s0040-6090(96)08559-8

Cited by 33 publications

(10 citation statements)

References 16 publications

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“…This behaviour can be explained by the higher reactivity of silicon with oxygen rather than nitrogen. These results and those reported in the literature 17–21 indicate that oxygen is the “dominant” reactive gas in the studied system. So, the sharp modifications of the listed discharge properties are due to the oxidation of the silicon target surface.…”

Section: Resultssupporting

confidence: 87%

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Rebib

Tomasella

Thomas

et al. 2007

Plasma Process. Polym.

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The instability phenomenon of RF sputtering of silicon target under ArO2N2 gas mixtures was investigated. The variations of plasma characteristics are correlated to those of the total pressure and the target bias voltage. The transition between the elemental and compound sputtering modes corresponds to an oxidation of the target surface and leads to abrupt changes in the analysed parameters. The influence of nitrogen flow, argon pressure and discharge power on the shape of the hysteresis loop is reported. This study allows us to set up a process calibration method by means of a correlation between the concentration of silicon, oxygen and nitrogen in the plasma and the elemental composition of the deposit.

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Section: Resultssupporting

confidence: 87%

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Rebib

Tomasella

Thomas

et al. 2007

Plasma Process. Polym.

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“…[18][19][20] Niobium oxide is recognized also as a catalyst or catalystsupporting oxide material. [21] Nb 2 O 5 thin films have been grown mainly using physical deposition techniques such as sputtering [3,[5][6][7]22] or ion plating. [4] Pyrolysis, [1] the sol-gel process, [9,23] and anodization [2] are less frequently used methods of obtaining Nb 2 O 5 films.…”

Section: Introductionmentioning

confidence: 99%

Niobium Oxide Thin Films Grown by Atomic Layer Epitaxy

Kukli¹,

Ritala²,

Leskelä³

et al. 1998

Chem. Vap. Deposition

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Nb 2 O 5 thin films were grown by atomic layer epitaxy (ALE) in the temperature range of 150-350°C using Nb(OC 2 H 5 ) 5 and H 2 O as precursors. All the films grown on glass substrates were amorphous, as indicated by X-ray diffraction analysis. The films exhibited smooth surfaces as observed by scanning electron microscopy and uniform thickness profiles with less than 7 % variation in the gas flow direction. The refractive index of the films increased with deposition temperature, stabilizing at 2.4 at temperatures higher than 230°C. Backscattering spectrometry analysis indicated that the films were stoichiometric Nb 2 O 5 .

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“…One branch of magnetron sputtering technology has attracted strong interest recently. This branch is the so-called Hot Target Magnetron Sputtering (HTMS) technique [1,2]. HTMS aims to run a cathode sputtering process with an increased temperature.…”

Section: Introductionmentioning

confidence: 99%

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

et al. 2022

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This paper presents the experimental results of high-temperature sputtering of nickel targets by the Gas Injection Magnetron Sputtering (GIMS) technique. The GIMS technique is a pulsed magnetron sputtering technique that involves the generation of plasma pulses by injecting small doses of gas into the zone of the magnetron target surface. Using a target with a dedicated construction to limit heat dissipation and the proper use of injection parameters and electrical power density, the temperature of the target during sputtering can be precisely controlled. This feature of the GIMS technique was used in an experiment with sputtering nickel targets of varying thicknesses and temperatures. Plasma emission spectra and current-voltage waveforms were studied to characterize the plasma process. The thickness, structure, phase composition, and crystallite size of the nickel layers produced on silicon substrates were investigated. Our experiment showed that although the most significant increase in growth kinetics was observed for high temperatures, the low sputtering temperature range may be the most interesting from a practical perspective. The excited plasma has the highest energy in the sputtering temperature range, just above the Curie temperature.

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Effect of target temperature on the reactive d.c.-sputtering of silicon and niobium oxides

Cited by 33 publications

References 16 publications

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Niobium Oxide Thin Films Grown by Atomic Layer Epitaxy

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

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