Effect of Ta Doping on the Microstructure and Thermoelectric Properties of Bi2O2Se

Jiang, Jia-Ling; Dong, Song‐Tao; Fu, Zhuang; Yu, Miao-Cheng; Zhao, Lei; Wang, Lei

doi:10.3390/met12111881

Cited by 5 publications

(3 citation statements)

References 40 publications

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“…Substituting the parent compound with a suitable element can lead to a better property. Transition metals (Nb, Ta), [142,143] post-transition metals (Sn), [144] Lanthenides (La, Ce), [145,146] Metalloids (Sb) [147] doping has been substituted at Bi-site that renders high carrier concentration and mobility, and it increases the electrical conductivity and reduce the lattice thermal conductivity, which further improves the thermoelectric performance. Reactive non-metals, such as I and Cl are also doped at the Se-site for increasing carrier concentration to enhance the thermoelectric performance of Bi 2 O 2 Se.…”

Section: Dopingmentioning

confidence: 99%

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Hossain,

Jena,

Giri

2024

Small Structures

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With the advent of two‐dimensional (2D) van der Waals (vdW) materials, many non‐van der Waals (nvdW) materials have been synthesized and are being exploited for novel applications. Bismuth oxychalcogenides (Bi2O2X; X is S, Se, Te), a nvdW series with moderate band gap semiconductors, possess high carrier mobility and air stability. The layers in Bi2O2X stay with a formal bond, giving rise to distinct structural, optical, thermal, and electronic properties different from conventional vdW materials. Herein, these properties, their synthesis, and transfer methods of 2D Bi2O2X are examined. The photodetector application of Bi2O2X and their heterostructure (HS) is surveyed with special attention to Bi2O2Se. Beyond the photodetector, the other emerging application fields, such as gas‐bio sensors, optoelectronic imaging, integrated memory, solar cells, and photothermal technology of Bi2O2X are looked over. Based on the ongoing research and challenges, the strategies for future innovations are presented from basics to miniaturized applications. In view of the band offsets of vdW and nvdW semiconductors, the type of HS of a series of 94 vdW‐nvdW sets is proposed. This review will guide future studies on Bi2O2X and their HS to meet the increasing demands in multifunctional applications from the laboratory to the industrial scale.

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Section: Dopingmentioning

confidence: 99%

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Hossain,

Jena,

Giri

2024

Small Structures

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“…Recently, the n-type Bi 2 O 2 Se TE materials have attracted researchers' attention because of their high Seebeck coefficient and low thermal conductivity [21]. Jiang et al [22] reported that the Ta doping of Bi 2 O 2 Se can improve the zT value from 0.11 to 0.18 at ~773 K. Pan et al [23] reported that the sulfur substitution of oxygen in Bi 2 O 2 Se can improve the electrical conductivity and then promote the zT value from 0.1 (original) to 0.29 at ~773 K. Liu et al [24] investigated the improvement of zT value by Ge doping. A maximum zT value of 0.3 at ~823 K was found in this study.…”

Section: Introduction mentioning

confidence: 99%

Enhanced thermoelectric properties of n-type Bi ₂O ₂Se by KCl doping

Zhang,

Wang,

Nisar

et al. 2023

Journal of Advanced Ceramics

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Bi 2 O 2 Se is considered one of the most promising thermoelectric (TE) materials for combining with p-type BiCuSeO in a TE module given its unique chemical and thermal stability. However, the enhancement of its dimensionless figure of merit, zT value, remains a challenge because of its low electrical conductivity. Herein, we introduce KCl into Bi 2 O 2 Se, synthesized by solid-state reaction and spark plasma sintering method, to improve its TE properties. The synthesized samples show an outstanding enhancement in electrical conductivity, carrier concentration, and power factor after KCl doping. The Bi 2 O 2 Se-based sample with a 0.05% KCl doping content possesses a high zT value of ~0.58 at 773 K, which is over 50% enhancement compared with the pristine Bi 2 O 2 Se sample. We also prove that the K element substitutes the Bi site, and Cl replaces the Se site by X-ray diffraction results and density functional theory calculation, supporting that K can improve the electrical conductivity by the position of Fermi level which is above the conduction band minimum. Experimental and theoretical results indicate the success of co-doping with a small amount of KCl and show a huge potential of this novel method for Bi 2 O 2 Se TE performance improvement.

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“…This can be calculated using the equation ZT = S 2 σT/κ. In this equation, S, σ, T, and κ represent the Seebeck coefficient, electrical conductivity, absolute temperature, and thermal conductivity, respectively [3][4][5]. Nonetheless, the interdependence of S, σ, and κ presents a challenge in simultaneously optimizing multiple parameters and enhancing thermoelectric performance.…”

Section: Introductionmentioning

confidence: 99%

Effect of NaF Doping on the Microstructure and Thermoelectric Performance of BiCuSeO Ceramics

Pei,

Xiang,

Sun

et al. 2023

Coatings

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The layered oxyselenide BiCuSeO has attracted significant attention due to its ability to demonstrate low thermal conductivity and a high Seebeck coefficient. This research project involved the synthesis of Bi1−xNaxCuSeO1−xFx (x = 0, 0.05, 0.10, 0.15, and 0.20) ceramics using high-energy ball milling and cold isostatic pressing techniques. A comprehensive investigation was conducted to examine the influence of co−doping NaF on the thermoelectric properties of BiCuSeO ceramics. The substitution of Bi3+ with Na+ introduces a substantial number of holes, resulting in a remarkable improvement in the electrical conductivity and power factor. The conductivity was significantly increased from 9.10 S cm−1 (BiCuSeO) to 94.5 S cm−1 (Bi0.85Na0.15CuSeO0.85F0.15) at 323 K. Additionally, at 823 K, the power factor of the Bi0.85Na0.15CuSeO0.85F0.15 sample reached 44.8 × 10−5 W/m K2. Furthermore, the Bi1−xNaxCuSeO1−xFx ceramics demonstrated a minimum thermal conductivity of 0.43 W m−1 K−1. Consequently, the Bi0.85Na0.15CuSeO0.85F0.15 sample achieved a maximum ZT value of 0.78, which is 7.09 times higher than that of the pure BiCuSeO sample (0.11).

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Effect of Ta Doping on the Microstructure and Thermoelectric Properties of Bi2O2Se

Cited by 5 publications

References 40 publications

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Enhanced thermoelectric properties of n-type Bi ₂O ₂Se by KCl doping

Effect of NaF Doping on the Microstructure and Thermoelectric Performance of BiCuSeO Ceramics

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Effect of Ta Doping on the Microstructure and Thermoelectric Properties of Bi2O2Se

Cited by 5 publications

References 40 publications

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Enhanced thermoelectric properties of n-type Bi 2O 2Se by KCl doping

Effect of NaF Doping on the Microstructure and Thermoelectric Performance of BiCuSeO Ceramics

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Enhanced thermoelectric properties of n-type Bi ₂O ₂Se by KCl doping