Effect of synthesis conditions on the electrical resistivity of 
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Moya, Jaime M.; Huang, C. L.; Choe, Jesse; Costin, Gelu; Foster, Matthew S.; Morosan, Emilia

doi:10.1103/physrevmaterials.3.084005

Cited by 15 publications

(7 citation statements)

References 40 publications

(52 reference statements)

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“…S I of the Supplemental Material. Our samples show a CDW transition at T CDW = 202 K consistent with high-quality samples used in other studies [8,[24][25][26][27].…”

supporting

confidence: 89%

Fermi Surface Reconstruction and Electron Dynamics at the Charge-Density-Wave Transition in TiSe2

et al. 2020

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The evolution of the charge carrier concentrations and mobilities are examined across the charge-density-wave (CDW) transition in TiSe 2 . Combined quantum oscillation and magnetotransport measurements show that a small electron pocket dominates the electronic properties at low temperatures whilst an electron and hole pocket contribute at room temperature. At the CDW transition, an abrupt Fermi surface reconstruction and a minimum in the electron and hole mobilities are extracted from two-band and Kohler analysis of magnetotransport measurements. The minimum in the mobilities is associated with the overseen role of scattering from the softening CDW mode. With the carrier concentrations and dynamics dominated by the CDW and the associated bosonic mode, our results highlight TiSe 2 as a prototypical system to study the Fermi surface reconstruction at a density-wave transition. * Sven.Friedemann@bristol.ac.uk arXiv:1911.01945v1 [cond-mat.str-el]

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“…S I of the Supplemental Material. Our samples show a CDW transition at T CDW = 202 K consistent with high-quality samples used in other studies [8,[24][25][26][27].…”

supporting

confidence: 89%

Fermi Surface Reconstruction and Electron Dynamics at the Charge-Density-Wave Transition in TiSe2

et al. 2020

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“…Nevertheless, a transport study has found finite resistivity in polycrystalline TiSe 2 samples at low temperature 12 , consistent with metallic behavior. The sensitivity of the low-temperature transport property on the synthesis condition 13 suggests that the observed metallic behavior in the polycrystalline sample is likely due to self-doping (see Fig. 1b).…”

Section: Introductionmentioning

confidence: 99%

Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels

et al. 2021

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Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers.

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“…A powder sample of TiSe 2 was synthesized via solid-state reaction. Powdered Ti and Se were weighed out in the atomic ratio of Ti : Se 1 : 2.02 and ground together in accordance with the work of Moya et al (2019). The resultant powder was sealed in a quartz tube under $3 Torr (1 Torr = 133.322 Pa) of partial argon atmosphere and heated at a rate of 323 K h À1 to 923 K. The sample remained at 923 K for 48 h before being quenched to ambient temperature.…”

Section: Methodsmentioning

confidence: 99%

Symmetry-mode analysis for local structure investigations using pair distribution function data

Hamilton¹,

Moya²,

Hallas³

et al. 2023

J Appl Cryst

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Symmetry-adapted distortion modes provide a natural way of describing distorted structures derived from higher-symmetry parent phases. Structural refinements using symmetry-mode amplitudes as fit variables have been used for at least ten years in Rietveld refinements of the average crystal structure from diffraction data; more recently, this approach has also been used for investigations of the local structure using real-space pair distribution function (PDF) data. Here, the value of performing symmetry-mode fits to PDF data is further demonstrated through the successful application of this method to two topical materials: TiSe2, where a subtle but long-range structural distortion driven by the formation of a charge-density wave is detected, and MnTe, where a large but highly localized structural distortion is characterized in terms of symmetry-lowering displacements of the Te atoms. The analysis is performed using fully open-source code within the DiffPy framework via two packages developed for this work: isopydistort, which provides a scriptable interface to the ISODISTORT web application for group theoretical calculations, and isopytools, which converts the ISODISTORT output into a DiffPy-compatible format for subsequent fitting and analysis. These developments expand the potential impact of symmetry-adapted PDF analysis by enabling high-throughput analysis and removing the need for any commercial software.

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Effect of synthesis conditions on the electrical resistivity of TiSe2

Cited by 15 publications

References 40 publications

Fermi Surface Reconstruction and Electron Dynamics at the Charge-Density-Wave Transition in TiSe2

Fermi Surface Reconstruction and Electron Dynamics at the Charge-Density-Wave Transition in TiSe2

Metal-to-insulator transition in Pt-doped TiSe2 driven by emergent network of narrow transport channels

Symmetry-mode analysis for local structure investigations using pair distribution function data

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