Effect of surface treatment of Si substrate on the crystal structure of FeSi2 thin film formed by ion beam sputter deposition method

Haraguchi, M.; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Saito, Takamichi; Sasase, Masato; Hojou, K.

doi:10.1016/s0168-583x(03)00752-3

Cited by 19 publications

(8 citation statements)

References 10 publications

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“…Ion energy in the present study was either 1 or 3 keV, whereas the ion fluence was either 3.7×10 15 15 Ne/cm 2 (Low energy and Low fluence). After irradiation, the substrate was annealed in vacuum for 30 min at 1073 K. Note that SE condition a) has been typically employed by authors to obtain highly-oriented -FeSi 2 films [7,9]. As to other conditions b)-d), either incident ion energy or fluence is reduced or both are reduced as compared with condition a).…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand, authors have adopted ion beam sputter deposition (IBSD) method, in which the deposition proceeds in "clean", ultra-high vacuum conditions. Furthermore, authors have shown that thin, uniform and highly-oriented -FeSi 2 films of approximately 100 nm in thickness can be fabricated on Si (100) substrates with an atomically flat interface, when the substrates are properly pre-treated by sputter etching (SE) with low-energy (in the order of several keV's) ions [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…Such a smooth interface was difficult to obtain when the substrate was treated by thermal etching or wet etching process [7]. However, since the use of ion beam inevitably introduces irradiation-induced defects to the substrate and to the film as well, semiconducting properties may be affected by the presence of such defects.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Hamamoto

Yamaguchi

Hojou

2013

Trans. Mat. Res. Soc. Japan

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Hamamoto

Yamaguchi

Hojou

2013

Trans. Mat. Res. Soc. Japan

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“…Both TE and WE treatments were employed by the present authors to treat Si substrate prior to fabrication of -FeSi 2 films. In the case of TE treatment, transmission electron microscopy (TEM) observation revealed that the films were composed of coalesced -FeSi 2 with various crystal orientations [4,5]. In the case of WE method, although highly-oriented -FeSi 2 films are often obtained, the film / substrate interface appeared to be wavy [6].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, when sputter-etching (SE) and the subsequent thermal annealing of the substrate are applied, it was shown that a highly-oriented -FeSi 2 (100) film with sharp interface can be grown on Si (100) substrate by means of ion beam sputter deposition (IBSD) method [4].…”

Section: Introductionmentioning

confidence: 99%

Application of sputter etching treatment to the formation of semiconducting silicide film on Si substrate

Yamaguchi

Esaka

Sasase

et al. 2012

Trans. Mat. Res. Soc. Japan

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A couple of ion-induced processes are applied to fabricate a highly crystalline film of semiconducting silicide, -FeSi 2 on a Si substrate. One is the sputter deposition process, in which 35 keV Ar + ions are utilized to deposit sputtered iron (Fe) on Si substrate to form -FeSi 2 in the temperature range around 973 K by means of ion beam sputter deposition (IBSD) method. The other is the sputter etching (SE) of the substrate surface prior to deposition, which plays a critical role in determining the crystalline properties of -FeSi 2 films. Authors have shown that when the SE conditions are properly chosen, continuous and relatively homogeneous -FeSi 2 thin films with high crystal orientation are fabricated with IBSD method in the temperature range of 873-973 K, with the film thickness of 50-100 nm. In addition, the interface is fairly smooth, where the transition layer at the interface is limited to a few atomic layers. Although care was taken to minimize the defect concentration in the obtained films, even the most highly-oriented -FeSi 2 films contain a small amount of defects. To make the defect concentration as low as possible, SE treatment was performed at lower incident energies. It was found that for Ne + ions the incident energy could be lowered to 0.8 keV to obtain highly-oriented -FeSi 2 films.

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Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β‐FeSi₂ film on Si(100)

Yamaguchi¹,

Hamamoto²,

Hojou³

2013

Phys. Status Solidi C

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Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of β‐FeSi2 films formed on Si substrate was investigated. The substrates were treated with Ne+ ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the film growth with an epitaxial relationship of β‐FeSi2 (100) // Si (100) were identified. These results were explained qualitatively in terms of the substrate treatment conditions, deposition temperature, as well as on the local Fe/Si ratio. The observed dependence of the film structure on these experimental parameters indicated that careful optimization of substrate treatment conditions and deposition parameters would further stimulate effort to fabricate β‐FeSi2 films with excellent crystalline properties. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of surface treatment of Si substrate on the crystal structure of FeSi2 thin film formed by ion beam sputter deposition method

Cited by 19 publications

References 10 publications

Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Application of sputter etching treatment to the formation of semiconducting silicide film on Si substrate

Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β‐FeSi₂ film on Si(100)

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Effect of surface treatment of Si substrate on the crystal structure of FeSi2 thin film formed by ion beam sputter deposition method

Cited by 19 publications

References 10 publications

Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

Application of sputter etching treatment to the formation of semiconducting silicide film on Si substrate

Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β‐FeSi2 film on Si(100)

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Product

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Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β‐FeSi₂ film on Si(100)