Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

Gusev, O. B.; Ershov, A. V.; Grachev, D. A.; Andreev, B. A.; Yablonskiy, A. N.

doi:10.1134/s1063776114040116

Cited by 5 publications

(6 citation statements)

References 19 publications

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“…The PL decay time and the energy peak position of the S‐band depend on average size of nanocrystals. The positions of the S‐band maxima are 726 nm (1.7 eV) and 830 nm (1.5 eV) for nc‐Si with average diameter of 2.5 and 3.5 nm, correspondingly, that consists with the results of the work ().…”

Section: Resultssupporting

confidence: 80%

“…On the other hand, the work () predicts the PL band position of the radiative recombination of STE(Si–Si) in the region 0.8–1.5 eV for nc‐Si in the SiO

_{2}

matrix, that has overlap with the typical nc‐Si luminescence band. The contribution from the radiative transitions from STE(Si–Si) states has been separated from the emission spectrum of nc‐Si in the work () basing on the significant difference in the photoluminescence decay time of the free and the self‐trapped excitons. Here, we present the experimental study of the luminescence band originated by STE(Si–Si) on silicon nanocrystal surface.…”

Section: Introductionmentioning

confidence: 99%

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Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Andreev

Yablonskiy

Krasilnik

et al. 2016

Physica Status Solidi (b)

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The intensive photoluminescence (PL) band corresponding to the self‐trapped excitons (STEs) at surface Si–Si dimers has been observed for the multilayer periodical nanostructures (SiO2/nc‐Si/) with average nanocrystal size of 2.5 and 3.5 nm. The maximum of the band is located at 1.06 μm (1.17 eV) and does not depend on the nanocrystal size. The decay times of the PL band are 5.9 and 5.3 ms for the nanocrystal size of 2.5 and 3.5 nm, correspondingly. The obtained experimental results give a direct evidence of the exciton self‐trapping on the silicon nanocrystals surface predicted by G. Allan, C. Delerue, and M. Lannoo [Phys. Rev. B 76, 2961 (1996)].

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Section: Resultssupporting

confidence: 80%

“…On the other hand, the work () predicts the PL band position of the radiative recombination of STE(Si–Si) in the region 0.8–1.5 eV for nc‐Si in the SiO

_{2}

Section: Introductionmentioning

confidence: 99%

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Andreev

Yablonskiy

Krasilnik

et al. 2016

Physica Status Solidi (b)

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“…PL decay curves for the SiO x /SiO 2 bare multilayer and the microresonator structure at 1.82 eV. The solid lines are two‐exponential fittings of the experimental data .…”

Section: Resultsmentioning

confidence: 99%

“…The decay curves have been measured at 1.70 eV, i.e., at the maximum of the PL peak. The initial part of the PL decay curves (the first 15 ns) has been cut off from the diagram, since this emission was not originated from the Si‐NCs .…”

Section: Resultsmentioning

confidence: 99%

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Si and Ge nanocrystals in resonator multilayer structures

Grachev

Ershov

Belolipetsky³

et al. 2016

Physica Status Solidi (a)

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We have produced optical planar resonators with an oxide layer (SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 ) containing Ge or Si nanocrystals as an active medium, which was placed between two Bragg mirrors. Samples have been obtained by vacuum physical deposition on silicon substrates and subsequent annealing of the active medium. Stationary and nanosecond time-resolved photoluminescence spectra have been measured in the range of 1.4-2.5 eV at room temperature. We have observed strong enhancement of the photoluminescence signal by 5 and 100 times for the Si and Ge nanocrystals placed in the microcavities at 1.7 and 1.8 eV, respectively. This was accompanied by a significant reduction of the photoluminescence decay time which is a proof of the Purcell effect. It has been found out that the oxide environment weakly affects the optical features of the resonators.

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Self-trapped excitons on the surface of Si nanocrystals in SiO₂

Gert

Yassievich

2014

Phys. Status Solidi B

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The experimental data recently obtained by the femtosecond pump‐probe spectroscopy technique have shown that the self‐trapped exciton (STE) state plays a key role in the dynamics of hot excitons in photoexcited silicon nanocrystals embedded in a SiO2 matrix. We present a theoretical model of excitons self‐trapped on Si–O bounds at the silicon nanocrystal surface. The thermally activated transition from the STE state to the nanocrystal has been studied. The nonradiative multiphonon recombination of the STE initiated by the interaction with vibrations of local dipoles in a amorphous SiO2 matrix has been considered, too. The relaxation process of “hot” carriers localized in Si nanocrystals has been modulated using Monte Carlo simulation. We have demonstrated that effective exchange between the STE states and “hot” free exciton states opens the new way of the energy relaxation and leads to the wide energy distribution of the hot carriers during 10–100 ps after excitation.

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Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

Cited by 5 publications

References 19 publications

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Si and Ge nanocrystals in resonator multilayer structures

Self-trapped excitons on the surface of Si nanocrystals in SiO₂

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Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

Cited by 5 publications

References 19 publications

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Si and Ge nanocrystals in resonator multilayer structures

Self-trapped excitons on the surface of Si nanocrystals in SiO2

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Product

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Self-trapped excitons on the surface of Si nanocrystals in SiO₂