Effect of surface roughness on the temperature of a silicon wafer heated by incoherent radiation

Temperature bistability in a silicon wafer with a doped layer on lamp-based heating

“…The corresponding portion of radiation is bound to be scattered and mostly absorbed inside the wafer. The optical properties of such layer can be more reliably calculated in the context of the model proposed in [18] to describe the optical properties of a wafer with a rough surface. Unfortunately, the models of doped layers with smeared layer-substrate interfaces are beyond the scope of the Rad-Pro Calculator software, and the optical parameters and temperature of wafers with such layers are to be calculated in a separate study.…”