Effect of surface orientation on reactive wetting of sapphire by Al–Ti alloys at 1273 K

Sui, Ran; Chang, Jinghuan; Lin, Qiaoli

doi:10.1016/j.matchemphys.2022.126187

Cited by 4 publications

(3 citation statements)

References 32 publications

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“…We initially confirmed the formation of a compact and monolithic TiN layer from a sufficiently thick Ti deposition achieved using the HVPE approach. As previous studies have noted, surface energy anisotropy may lead to extrinsic wettability, resulting in an irregular Ti deposition layer surface on the sapphire surface . Furthermore, the creation of a compact and monolithic TiN layer can cause delamination with the substrate due to thermally induced residual stress during fabrication.…”

Section: Resultsmentioning

confidence: 98%

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Kim,

Chung,

et al. 2023

Crystal Growth & Design

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Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material due to its various benefits. Especially, development of a buffer layer between GaN and the substrate verifies to be an effective strategy to reduce high threading dislocation density. However, the buffer layer often impedes strong adhesion between the epilayer and foreign substrate because thermally induced residual stress often causes delamination of the epilayer during fabrication. Here, we developed a robust GaN heteroepitaxy employing a porous buffer layer formulated by hydride vapor phase epitaxy. A sufficiently low but completely coated thin Ti layer was deposited on the sapphire substrate, which led to a rough and porous TiN layer after nitridation. This porous structure enables the penetration of the GaN source into the porous structure, allowing GaN epitaxy initiation throughout the TiN layer. As a result, GaN crystal growth can fill the porous area during the GaN heteroepitaxy. Integrated visualization demonstrated that the voids were successfully removed by GaN infiltration, enabling the heteroepitaxial structure to show little deformation, confirmed by multiple indentations. Last, the void-free GaN heteroepitaxy with the porous TiN buffer layer displayed robust adhesion after delamination tests.

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Section: Resultsmentioning

confidence: 98%

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Kim,

Chung,

et al. 2023

Crystal Growth & Design

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“…They found that the wettability and adhesion between the Al droplets and the α-Al 2 O 3 surfaces are quite sensitive to the crystallographic orientation. Sui et al [13] investigated the effect of crystallographic orientation on the wetting behavior of sapphire (α-Al 2 O 3 ) by Al-Ti alloys under a high vacuum atmosphere at 1273 K. The experimental results show that the effect of different orientations of the substrate surface on the wettability mainly depends on the nature of the interfacial bonding. When solid-liquid interfacial bonding is chemical bonding, the higher the bond energy, the better the wettability.…”

Section: Introductionmentioning

confidence: 99%

“…They discovered that the wetting characteristics of Li droplets on Fe (112) and polycrystal Fe surfaces displayed anisotropy based on the contact angle and wetting radius. For ceramic crystals, the termination atoms corresponding to the different crystal surfaces influence the final wettability [13]. Xu et al [19] investigated the wetting behavior of Al-Ti alloy droplets on 4 H-SiC terminated with C atoms by MD and analyzed the bonding strength of the reaction products with the C-terminal 4H-SiC interface, which showed that the high bonding strength of SiC (0001) with C-terminal TiC (111) was mainly caused by the formation of covalent bonds between the C atoms at the interface.…”

Section: Introductionmentioning

confidence: 99%

The effect of crystallographic orientation of α-Al₂O₃ on the wetting behavior and adhesion characteristics of aluminum droplets

Zhuo,

Rui,

Lyu

et al. 2024

J. Phys.: Condens. Matter

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To solve the problem of adhesion of aluminum fluid to the inner wall of the vacuum ladle in the aluminum electrolysis industry, molecular dynamics simulation is performed to research the wetting behavior of Al droplets on the surfaces of the α-Al2O3 substrates C (0001), M (1-100), and R (1-102) at 1073 K. Meanwhile, the adhesion characteristics of the Al droplet are evaluated by the potential of the mean force (PMF) for the separation of the Al droplets from different surfaces of the α-Al2O3 substrate. The results show that the wetting behavior of Al droplets on the α-Al2O3 substrate is influenced by the different crystallographic orientations. The diffusion of Al droplets in the x-o-y plane of the substrate exhibits isotropic. The PMF and the interfacial potential energy reveal that the magnitude of the adhesion work in the solid-liquid separation of Al droplets from α-Al2O3 substrates follows the order C (0001) > R (1-100) > M (1-102). These findings characterize the wetting properties and adhesion behavior of Al droplets on an atomic scale and provide a theoretical basis for the selection of materials for the inner wall of the vacuum ladle.

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Wetting of Al2O3 by Cu-xTi alloys at 1373 K

Lin,

Xie,

2024

Journal of the European Ceramic Society

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Effect of surface orientation on reactive wetting of sapphire by Al–Ti alloys at 1273 K

Cited by 4 publications

References 32 publications

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

The effect of crystallographic orientation of α-Al₂O₃ on the wetting behavior and adhesion characteristics of aluminum droplets

Wetting of Al2O3 by Cu-xTi alloys at 1373 K

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Effect of surface orientation on reactive wetting of sapphire by Al–Ti alloys at 1273 K

Cited by 4 publications

References 32 publications

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

The effect of crystallographic orientation of α-Al2O3 on the wetting behavior and adhesion characteristics of aluminum droplets

Wetting of Al2O3 by Cu-xTi alloys at 1373 K

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The effect of crystallographic orientation of α-Al₂O₃ on the wetting behavior and adhesion characteristics of aluminum droplets