Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

Ch, Ramesh; Tyagi, Prashant; Kaswan, Jyoti; Yadav, B. S.; Shukla, Ajay Kumar; Kumar, M. Senthil; Kushvaha, S. S.

doi:10.1039/c9ra09707d

Cited by 10 publications

(5 citation statements)

References 38 publications

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“…Surface Modifications for Electronic Devices: Surface engineering techniques are crucial for optimizing the performance and reliability of electronic devices, as well as enabling their miniaturization. Recent research and developments in this field have focused on various surface modifications to enhance the electrical properties, adhesion, and moisture resistance of electronic components [98].…”

Section: Electronics and Semiconductor Industrymentioning

confidence: 99%

Surface Engineering of Metals: Techniques, Characterizations and Applications

Ramezani

Ripin

Pasang

et al. 2023

Metals

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This paper presents a comprehensive review of recent advancements in surface engineering of metals, encompassing techniques, characterization methods and applications. The study emphasizes the significance of surface engineering in enhancing the performance and functionality of metallic materials in various industries. The paper discusses the different techniques employed in surface engineering, including physical techniques such as thermal spray coatings and chemical techniques such as electroplating. It also explores characterization methods used to assess the microstructural, topographical, and mechanical properties of engineered surfaces. Furthermore, the paper highlights recent advancements in the field, focusing on nanostructured coatings, surface modification for corrosion protection, biomedical applications, and energy-related surface functionalization. It discusses the improved mechanical and tribological properties of nanostructured coatings, as well as the development of corrosion-resistant coatings and bioactive surface treatments for medical implants. The applications of surface engineering in industries such as aerospace, automotive, electronics, and healthcare are presented, showcasing the use of surface engineering techniques to enhance components, provide wear resistance, and improve corrosion protection. The paper concludes by discussing the challenges and future directions in surface engineering, highlighting the need for further research and development to address limitations and exploit emerging trends. The findings of this review contribute to advancing the understanding of surface engineering and its applications in various sectors, paving the way for future innovations and advancements.

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Section: Electronics and Semiconductor Industrymentioning

confidence: 99%

Surface Engineering of Metals: Techniques, Characterizations and Applications

Ramezani

Ripin

Pasang

et al. 2023

Metals

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“…It was revealed by an X-ray photoelectron spectroscopy (XPS) study that a metal grain boundary acts as the favorable energy site for the nucleation of III-V pyramid islands. Correspondingly, during the growth of h-BN monolayers, it was observed that the orientation of adlayers is strongly affected by the crystalline substrate facets [54][55][56].…”

Section: Adlayer Defectmentioning

confidence: 99%

Boron Nitride Fabrication Techniques and Physical Properties

Tabbakh¹,

Tyagi²,

Anandan³

et al. 2022

Characteristics and Applications of Boron

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The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandgap, low electron affinity, and chemical and thermal stability. Among III-nitride semiconductors, boron nitride has proven to be a favorable candidate for common dimension materials in several crystalline forms due to its sp2- or sp3-hybridized atomic orbitals. Among all crystalline forms, hexagonal (h-BN) and cubic (c-BN) are considered as the most stable crystalline forms. Like carbon allotropes, the BN has been obtained in different nanostructured forms, e.g., BN nanotube, BN fullerene, and BN nanosheets. The BN nanosheets are a few atomic layers of BN in which boron and nitrogen are arranged in-planer in hexagonal form. The nanostructure sheets are used for sensors, microwave optics, dielectric gates, and ultraviolet emitters. The most effective and preferred technique to fabricate BN materials is through CVD. During the growth, BN formation occurs as a bottom-up growth mechanism in which boron and nitrogen atoms form a few layers on the substrate. This technique is suitable for high quality and large-area growth. Although a few monolayers of BN are grown for most applications, these few monolayers are hard to detect by any optical means as BN is transparent to a wide range of wavelengths. This chapter will discuss the physical properties and growth of BN materials in detail.

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“…TiN is a substrate with a low nucleation rate of GaN NWs, resulting in a density an order of magnitude lower than that of GaN NWs grown on Si(111). TiN layers have been prepared by nitridation of Ti films (Sarwar et al, 2015;Wo ¨lz et al, 2015;Zhao et al, 2016;van Treeck et al, 2018;Mudiyanselage et al, 2020) and Ti foils (Calabrese et al, 2016;May et al, 2016;Calabrese et al, 2017;Ramesh et al, 2019Ramesh et al, , 2020Mudiyanselage et al, 2020), as well as by directly sputtering TiN x on Al 2 O 3 (Auzelle et al, 2021).…”

Section: Introductionmentioning

confidence: 99%

X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy

et al. 2023

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GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al2O3 are studied by X-ray diffraction (XRD) and grazing-incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection mode and at grazing incidence, reveals Ti, TiN, Ti3O, Ti3Al and Ga2O3 crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al2O3 and GaN. These topotaxial crystallites in the Ti film, formed as a result of interfacial reactions and N exposure, possess little misorientation with respect to Al2O3. As a result, GaN NWs grow on the top TiN layer, possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modelled by the Monte Carlo method, taking into account the orientational distributions of NWs, the variety of their cross-sectional shapes and sizes, and the roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of the {1100} and {1120} side facets are determined.

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Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

Abstract: The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated.

Cited by 10 publications

References 38 publications

Surface Engineering of Metals: Techniques, Characterizations and Applications

Surface Engineering of Metals: Techniques, Characterizations and Applications

Boron Nitride Fabrication Techniques and Physical Properties

X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy

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Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

Abstract: The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated.

Cited by 10 publications

References 38 publications

Surface Engineering of Metals: Techniques, Characterizations and Applications

Surface Engineering of Metals: Techniques, Characterizations and Applications

Boron Nitride Fabrication Techniques and Physical Properties

X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

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Product

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X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy