Effect of substrates on thermoelectric properties of Ag–Sb–Te thin films within the temperature annealing

Prainetr, Natchanun; Vora–ud, Athorn; Thaowonkaew, Somporn; Horprathum, Mati; Muthitamongkol, Pennapa; Seetawan, Tosawat

doi:10.1016/j.physb.2019.411977

Cited by 8 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Films Ge 8 Sb 92 transition from the amorphous phase to the crystalline phase when the substrate is heated [37]. The crystallinity of the thermoelectric thin film Ag-Sb-Te at room temperature depends on the state of the substrate [38]. The crystalline silicon thin film is a two-phase structure of the amorphous phase and the crystalline phase [39].…”

Section: Discussionmentioning

confidence: 99%

Simulation of Epitaxial Film–Substrate Interaction Potential

2022

View full text Add to dashboard Cite

The formation of the substrate surface potential based on the Lennard-Jones two-particle potential is investigated in this paper. A simple atom’s square lattice on the substrate surface is considered. The periodic potential of the substrate atoms is decomposed into a Fourier series. The amplitude ratio for different frequencies has been examined numerically. The substrate potential is approximated with high accuracy by the Frenkel–Kontorova potential at most parameter values. There is a field of parameters in which the term plays a significant role, with a period half as long as the period of the substrate atoms. The ground state of the monoatomic film is modeled on the substrate potential. The film may be in both crystalline and amorphous phases. The transition to the amorphous phase is associated with a change in the landscape of the substrate potential. There are introduced order parameters for structural phase transition in the thin film. When changing the parameters of the substrate, the order parameter experiences a jump when changing the phase of the film.

show abstract

Section: Discussionmentioning

confidence: 99%

Simulation of Epitaxial Film–Substrate Interaction Potential

2022

View full text Add to dashboard Cite

show abstract

“…The carrier concentration for AST/SiO 2 films increased from 30.70 × 10 20 cm −3 to 110 × 10 20 cm −3 with annealing temperature from 573 K to 773 K. The hightemperature annealing induced highly dense grains with the smallest size leading to the decrease in µ value after a certain maximum value. For AST/soda-lime glass films, the highest value of µ = 5.24 cm 2 V −1 s −1 was achieved at an annealing temperature of 723 K, which decreased further with increasing annealing temperature due to the increased disorder ness and grain boundaries in the films [224]. The density of various defects such as coordination number and dangling bonds get reduced during the in-situ diffusion of dopants at a higher intensity in plasma-enhanced chemical vapour deposition (PECVD) procedure because of energy transfer from plasma.…”

Section: Dimensionality Effectmentioning

confidence: 97%

Physics and technology of thermoelectric materials and devices

Dadhich

Saminathan

Kumari

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The continuous depletion of fossil fuels and the increasing demand for eco-friendly and sustainable energy sources have prompted researchers to look for alternative energy sources. The loss of thermal energy in heat engines (100-350 ºC), coal-based thermal plants (150-700 ºC), heated water pumping in the geothermal process (150-700 ºC), and burning of petrol in the automobiles (150-250 ºC) in form of untapped waste-heat can be directly and/or reversibly converted into usable electricity by means of charge carriers (electrons or holes) as moving fluids using thermoelectric (TE) technology, which works based on typical Seebeck effect. The enhancement in TE conversion efficiency has been a key challenge because of the coupled relation between thermal and electrical transport of charge carriers in a given material. In this review, we have deliberated the physical concepts governing the materials to device performance as well as key challenges for enhancing the TE performance. Moreover, the role of crystal structure in the form of chemical bonding, crystal symmetry, order-disorder and phase transition on charge carrier transport in the material has been explored. Further, this review has also emphasized some insights on various approaches employed recently to improve the TE performance, such as, (i). carrier engineering via band engineering, low dimensional effects, and energy filtering effects and (ii). Phonon engineering via doping/alloying, nano-structuring, embedding secondary phases in the matrix and microstructural engineering. Wehave also briefed the importance of magnetic elements on thermoelectric properties of the selected materials and spin Seebeck effect. Furthermore, the design and fabrication of TE modules and their major challenges are also discussed. As, thermoelectric figure of merit, zT does not have any theoretical limitation, an ideal high performance thermoelectric device should consist of low-cost, eco-friendly, efficient, n- or p-type materials that operate at wide- temperature range and similar coefficients of thermal expansion, suitable contact materials, less electrical/ thermal losses and constant source of thermal energy. Overall, this review provides the recent physical concepts adopted and fabrication procedures of TE materials and device so as to improve the fundamental understanding and to develop a promising TE device.

show abstract

“…S 2 /q is defined as the power factor (PF). Traditional thin films have usually employed different substrates such as hardrough Al 2 O 3 and SrTiO 3 , 5,6 hard-flat glass and SiO 2 , 7 and flexible-very flat polyimide. 8 Considering that flexible TE thin film is one of the new generations of TE technology, it holds potential in wearable applications.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Ag-Doped Sb2Te3 Thin Films on SiO2 and Polyimide Substrates with Rapid Thermal Annealing

Thaowonkaew

Kumar²,

Vora–ud

2021

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

This work reports Ag-doped Sb 2 Te 3 (A-ST) thin films synthesized by DC magnetron sputtering method onto SiO 2 (SO) and polyimide (PI) substrates based on atomic composition optimization. The effect of post-depositional rapid thermal annealing on the crystallinity, morphology, composition, and thermoelectric properties of thin films was investigated. It was found that thin films on crystalline SO substrate yielded higher crystallinity and eventually a higher thermoelectric power factor in comparison to those grown on a polyimide substrate. The maximum room-temperature power factors achieved were 0.53 mW m À1 K À2 (PI) and 3.95 mW m À1 K À2 (SO).

show abstract

Effect of substrates on thermoelectric properties of Ag–Sb–Te thin films within the temperature annealing

Cited by 8 publications

References 19 publications

Simulation of Epitaxial Film–Substrate Interaction Potential

Simulation of Epitaxial Film–Substrate Interaction Potential

Physics and technology of thermoelectric materials and devices

Thermoelectric Properties of Ag-Doped Sb2Te3 Thin Films on SiO2 and Polyimide Substrates with Rapid Thermal Annealing

Contact Info

Product

Resources

About