Effect of Substrate Temperature on the Optical and Electrical Properties of Nitrogen-Doped NiO Thin Films

Tian, Yuan; Gong, Lianguo; Qi, Xueqian; Yang, Yibiao; Zhao, Xiaojie

doi:10.3390/coatings9100634

Cited by 18 publications

(7 citation statements)

References 34 publications

(38 reference statements)

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“…The lessdisordered structure and the decrease in the tensile strain of NiO upon nitrogen doping resulted in more transparent films with a larger energy gap. These observations are not in accordance with theoretical predictions [19] and published experimental work [32,[37][38][39][40] for nitrogen-doped NiO, which are presented in Table 1. This is attributed to the quality and stoichiometry of the undoped NiO fabricated by sputtering in this work, such as the preferential growth of crystallites in the (200) direction instead of the (111) generally observed and the high ratio of at.% O/N~1.72.…”

Section: Nio:n Thin Filmscontrasting

confidence: 62%

“…It is seen that the structural defects of the as-prepared NiO film created states in the band gap resulting in a decrease in transmittance and a very slow rate of increase in absorption coefficient (also shown in Figure 2c) as photons with increasing energy are impinging on the film surface. It has been reported that Ni +2 vacancies create Ni +3 and in association with the stress and the defects of the structure (interstitial oxygen, boundaries of small grains-crystallites) can be responsible for the low visible transmittance [17,18,40,44] and the relatively low energy band gap (3.15 eV) of undoped NiO [17]. The optical properties of undoped NiO are discussed in more detail in conjunction with the properties of the nitrogen-containing NiO films in the next section.…”

Section: Properties Of Nio and Nio:nthin Films Nio Thin Filmsmentioning

confidence: 94%

“…Almost ten years ago, in an attempt to predict band gap modulation via theoretical calculations [19], it was revealed that the wide band gap of NiO could be narrowed by nitrogen doping (NiO:N). Since then, NiO:N thin films have been made by wet methods [37][38][39] or dry methods (rf or dc sputtering [32,40], and the main properties of these undoped and N-doped NiO films are tabulated in Table 1. It is seen that in most cases heated substrates are used, and the introduction of nitrogen into the NiO structure has resulted in films with reduced transmittance and resistivity compared to undoped NiO films.…”

Section: Introductionmentioning

confidence: 99%

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Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

et al. 2021

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Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

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Section: Nio:n Thin Filmscontrasting

confidence: 62%

Section: Properties Of Nio and Nio:nthin Films Nio Thin Filmsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

et al. 2021

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“…This endorsed the presence of GO and MnO 2 in the composites [ 5 , 35 , 36 , 37 ]. In the case of Raman spectra for NGO, two significant peaks of GO representing D and G bands were assigned, and remaining broad peaks were observed at 488 cm −1 and 929 cm −1 and assigned to first order (1P) phonon, longitudinal optical and transverse optical mode (LO + TO) in NiO [ 22 , 29 , 38 , 39 , 40 , 41 ]. In the case of Raman spectra for NMGO, the peaks of MnO 2 , NiO, and GO were observed, which endorsed the successful formation of an NiO/MnO 2 /GO composite as shown in Figure 2 b.…”

Section: Resultsmentioning

confidence: 99%

Nanoengineering of NiO/MnO2/GO Ternary Composite for Use in High-Energy Storage Asymmetric Supercapacitor and Oxygen Evolution Reaction (OER)

Arshad¹,

Usman

Adnan

et al. 2022

Nanomaterials

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Designing multifunctional nanomaterials for high performing electrochemical energy conversion and storage devices has been very challenging. A number of strategies have been reported to introduce multifunctionality in electrode/catalyst materials including alloying, doping, nanostructuring, compositing, etc. Here, we report the fabrication of a reduced graphene oxide (rGO)-based ternary composite NiO/MnO2/rGO (NMGO) having a range of active sites for enhanced electrochemical activity. The resultant sandwich structure consisted of a mesoporous backbone with NiO and MnO2 nanoparticles encapsulated between successive rGO layers, having different active sites in the form of Ni-, Mn-, and C-based species. The modified structure exhibited high conductivity owing to the presence of rGO, excellent charge storage capacity of 402 F·g−1 at a current density of 1 A·g−1, and stability with a capacitance retention of ~93% after 14,000 cycles. Moreover, the NMGO//MWCNT asymmetric device, assembled with NMGO and multi-wall carbon nanotubes (MWCNTs) as positive and negative electrodes, respectively, exhibited good energy density (28 Wh·kg−1), excellent power density (750 W·kg−1), and capacitance retention (88%) after 6000 cycles. To evaluate the multifunctionality of the modified nanostructure, the NMGO was also tested for its oxygen evolution reaction (OER) activity. The NMGO delivered a current density of 10 mA·cm−2 at the potential of 1.59 V versus RHE. These results clearly demonstrate high activity of the modified electrode with strong future potential.

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“…The intense peaks at 853.9 eV and 872.8 eV are attributed to Ni 2+ while the other peak at 855.7 eV is ascribed to Ni 3+ . [48][49][50] The ratio of Ni 3+ increases with sputtering temperatures. Meanwhile, Fig.…”

mentioning

confidence: 99%

Magnetron sputtering tuned “π back-donation” sites over metal oxides for enhanced electrocatalytic nitrogen reduction

et al. 2022

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show abstract

Effect of Substrate Temperature on the Optical and Electrical Properties of Nitrogen-Doped NiO Thin Films

Cited by 18 publications

References 34 publications

Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Nanoengineering of NiO/MnO2/GO Ternary Composite for Use in High-Energy Storage Asymmetric Supercapacitor and Oxygen Evolution Reaction (OER)

Magnetron sputtering tuned “π back-donation” sites over metal oxides for enhanced electrocatalytic nitrogen reduction

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