Effect of substrate temperature on properties of co-evaporated copper antimony sulfide thin films

Kumar, B. Hemanth; Shaji, Sadasivan; Kumar, M.C. Santhosh

doi:10.1016/j.tsf.2020.137838

Cited by 9 publications

(4 citation statements)

References 39 publications

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“…The other possible reason may be, the rate of the deposition reaction increases resulting in the coalesce of the smaller grains into effectively larger grain [46,47]. With further increase in the substrate temperature beyond 200 °C, the scattering of the atoms takes place which may reduce the formation of clusters resulting in a smaller crystallite size [48]. Devarajan et al [49] observed similar behavior in the growth of crystallites for the CdSe thin films with the increase in the substrate temperature.…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Kumar¹,

Valanarasu²,

Gunavathy

et al. 2022

Phys. Scr.

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The current work investigates the influence of the substrate temperature on the photodetection capability of cadmium selenide (CdSe) thin films deposited through economically viable thermal evaporation technique on glass substrates. The substrate temperature varied from room temperature (30 °C to 250 °C). The existence of a single-phase of hexagonal structured CdSe was established from XRD patterns with dominant peaks along the (002) plane in all the samples. The SEM micrographs show the homogeneous surface of the films without any pinholes. The bandgap of the films was found to vary with the variation in the substrate temperature and the sample fabricated at 200°C substrate temperature showed a bandgap of 2.00 eV. The light-dependent electrical analysis is also made to reveal the photodetection capability of the deposited CdSe films. The 200°C deposited CdSe film exhibits a higher responsivity of 8.07×10-2 A/Wand a maximum detectivity of 6.66×109 Jones. The external quantum efficiency (EQE) was found to rise with the substrate temperature and a maximum value of 18.8 % for the 200 °C deposited sample. The observed rise and decay times show a rapid response when the incident light intensity is changed from 1 to 5mW/cm2.

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Section: X-ray Diffraction Analysismentioning

confidence: 99%

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Kumar¹,

Valanarasu²,

Gunavathy

et al. 2022

Phys. Scr.

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“…Copper indium gallium selenide (CuInGaSe) and cadmium telluride (CdTe) thin film solar cells have demonstrated efficiencies of 21.5% and 21.7%, respectively 13 , 14 . However, these materials have several disadvantages, such as low elemental abundance 15 , high cost, and toxicity of elements such as Cd and Te 16 . These disadvantages have significantly hindered the widespread deployment of these materials as photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of ternary copper antimony sulfide via solventless thermolysis or aerosol assisted chemical vapour deposition using metal dithiocarbamates

Makin

Alam

Buckingham

et al. 2022

Sci Rep

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Copper antimony sulfide (Cu-Sb-S) has recently been proposed as an attractive alternative photovoltaic material due to the earth-abundant and non-toxic nature of the elements, high absorption coefficients and band gaps commensurate with efficient harvesting of solar photonic flux across multiple phases of Cu-Sb-S. These materials are therefore highly desirable and sustainable and scalable deposition techniques to produce them are of interest. In this paper, we demonstrate two facile, low-temperature and inexpensive techniques (solventless thermolysis and aerosol-assisted chemical vapor deposition (AACVD)) for the preparation of binary digenite (Cu1.8S), chalcocite (Cu2S) and stibnite (Sb2S3) and several phases of ternary copper-antimony-sulfide (Cu2xSb2(1−x)Sy, where 0 ≤ x ≤ 1). It was found that by utilising these different techniques and varying the ratio of Cu:Sb, pure phases of ternary chalcostibite (CuSbS2), fematinite (Cu3SbS4) and tetrahedrite (Cu12Sb4S13) can be achieved. Two single-source precursors were investigated for this purpose, namely the diethyldithiocarbamate (DTC) complexes of copper and antimony Cu(DTC)2 and Sb(DTC)3. These were decomposed both individually (to produce binary materials) and combined (to produce ternary materials) at different ratios. From the solventless thermolysis and AACVD methods, either particulate or thin film material was formed, respectively. These materials were then characterised by powder XRD, SEM, EDX and Raman spectroscopies to determine the crystalline phase, material morphology and uniformity of elemental composition. This analysis demonstrated that as the Cu-content increases, the phase of the ternary material changes from chalcostibite (CuSbS2) and fematinite (Cu3SbS4) at a low Cu:Sb ratio to tetrahedrite (Cu12Sb4S13) at a high Cu:Sb ratio.

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“…The copperzinc tin sulfoselenide (CZTSSe) was explored as a promising alternative material because it might fulfill the prerequisites for sufficient solar irradiation but still, the efficiency of PV devices is relatively low, despite more than a decade of painstaking researches [4]. The copper-based chalcogenide systems including CuSbS2 (Chalcostibite), Cu3SbS4 (Famatinite), Cu12Sb4S13 (Tetrahedrite), and Cu3SbS3 (Skinnerite) phases have been explored as they are interesting alternatives for CIGS thin-film solar cells due to their low-toxicity and earthabundant absorber components [3,[5][6][7][8][9][10][11][12][13]. The Cu-Sb-S system compounds are p-type semiconductors with optical band gap (Eg) ranging between 0.5 and 2.0 eV and a large absorption coefficient over 10 4 cm −1 at visible wavelengths, which shows a comparable efficiency (i.e., 22.9%) to that of CIGS and CZTSSe [14].…”

Section: Introductionmentioning

confidence: 99%

Electron Density and Optoelectronic Properties of Copper Antimony Sulphur Ternary Compounds for Photovoltaic Applications

Khairy

Jiang

Boulet

et al. 2022

J. Electron. Mater.

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Design of efficient solar energy-conversion materials has attracted much interest in the last decades. Among these materials, copper-based semiconducting chalcogenides have been employed as alternatives for copper indium gallium selenide (CIGS) thin-film solar cells due to their low toxicity and earth-abundant absorber components. In the present manuscript, structural, electronic, topological, and optical properties of ternary chalcogenide CuSbS2, Cu3SbS3, and Cu3SbS4 have been investigated using the full potential linear augmented plane wave (FP-LAPW) method. An indirect bandgap is observed for CuSbS2 with Eg = 1.178 eV and a direct bandgap is found for Cu3SbS3, and Cu3SbS4 with Eg = 1.283 and 1.0 eV, respectively. The valence band maximum (VBM) of CuSbS2, Cu3SbS3, and Cu3SbS4 are mainly predominated by a strong Cu-3d and S-3p orbitals hybridization. The conduction band of CuSbS2 and Cu3SbS3 are mainly characterized by Sb-5p orbital and S-3p orbital mixing. However, conduction band of Cu3SbS4 is dominated by the mixing of Sb-5s and S-3p orbitals. It is found that the Cu-S and Sb-S bonds lie in the transit closed-shell zone, between the typical ionic and covalent bonds. The optical properties of CuSbS2, Cu3SbS3, and Cu3SbS4 in terms of absorption coefficient, extinction coefficient, refractive index, and reflectivity have been investigated. The results show that the CuSbS2, Cu3SbS3, and Cu3SbS4 compounds have real potential to be used for solar-energy conversion.

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Effect of substrate temperature on properties of co-evaporated copper antimony sulfide thin films

Cited by 9 publications

References 39 publications

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Enhancing the photodetection property of CdSe thin films via thermal evaporation technique: role of substrate temperature

Synthesis of ternary copper antimony sulfide via solventless thermolysis or aerosol assisted chemical vapour deposition using metal dithiocarbamates

Electron Density and Optoelectronic Properties of Copper Antimony Sulphur Ternary Compounds for Photovoltaic Applications

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