“…The reduction of the vacancy defects causes the abatement of the trapping and scattering on the carriers [10], resulting in the increment of the l H of the MoSe x films. However, when the substrate temperature increases to 498 K and 573 K, the apparent tendency of crystallization of the MoSe x films could produce lots of grain boundaries and these boundaries maximize the scattering and trapping of charge carriers [9,23], which causes the sharp reduction of the l H of the MoSe x films. It can be concluded that the amorphous MoSe x films prepared at 298 and 423 K have higher l H than the crystalline MoSe x films.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…So far, researchers have mainly studied the electrical properties of stoichiometric MoSe 2 thin films [5][6][7][8]. However, these films are polycrystalline and the grain boundaries maximize the trap and/ or scattering of the charge carriers, resulting in the reduction the mobility [9]. Thus it is essential to investigate the electrical properties of amorphous films.…”
“…The reduction of the vacancy defects causes the abatement of the trapping and scattering on the carriers [10], resulting in the increment of the l H of the MoSe x films. However, when the substrate temperature increases to 498 K and 573 K, the apparent tendency of crystallization of the MoSe x films could produce lots of grain boundaries and these boundaries maximize the scattering and trapping of charge carriers [9,23], which causes the sharp reduction of the l H of the MoSe x films. It can be concluded that the amorphous MoSe x films prepared at 298 and 423 K have higher l H than the crystalline MoSe x films.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…So far, researchers have mainly studied the electrical properties of stoichiometric MoSe 2 thin films [5][6][7][8]. However, these films are polycrystalline and the grain boundaries maximize the trap and/ or scattering of the charge carriers, resulting in the reduction the mobility [9]. Thus it is essential to investigate the electrical properties of amorphous films.…”
“…First report about the p-type TCO film of NiO was published in 1993 by Sato et al [4], but the average transmittance of the NiO film in the visible region was about 40%. In 1997, Kawazoe et al [5] reported that the delafossite structure oxide CuAlO 2 film is a p-TCO, which initiated extensive attention to this type of materials [6,7]. Delafossite has two crystalline types 3R and 2H depending on the orientation of each layer in stacking [8].…”
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