The electrical sheet resistance of antimony thin films was measured using a Miller sweep unit. The films thicknesses were 34, 55, 71, 95, 115, 163, 195, 252, 300, and 351 Å and were prepared under a pressure of about 7.98×10—3 Pa. All films experienced an ohmic behavior. The films had resistances that ranged between 45 and 9.1×106 Ω. The 34 and 55 Å films had the highest resistances that were in the range of MΩ. Moreover, the films exhibited no hysteresis upon sweeping the applied emf back and forth. The behavior seemed consistent with prior dc measurements on semimetallic Bi thin films that reported resistivity values close to or higher by one to two orders of magnitude than those of the present set of the Sb thin films. The consistency is rather appealing since the thicknesses of the Bi thin films in the former investigation are close to those of the Sb thin films studied in the present investigation. The tested behavior adds to the accumulative belief that Sb films below a certain critical thickness might have undergone a semimetallic–semiconductor change of phase.