Effect of substrate temperature on the surface structure, composition and morphology of indium–tin oxide films

Carvalho, C. Nunes de; Rego, A.M. Botelho do; Amaral, A.; Brogueira, P.; Lavareda, G.

doi:10.1016/s0257-8972(99)00619-2

Cited by 63 publications

(32 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(a). The component at 530.0 eV was assigned to be the In-O-In bond [6], whereas the energy separation between the In-O-In and In-O-H bonds of 1.6 eV was consistent with the reported value between the main components of In 2 O 3 and In(OH) 3 [7], [8]. The component at 531.0 eV was attributed to the Al-O-Al bond according to the measurement on sapphire substrates in good agreement with previously reported values [9], whereas the energy separation between the Al-O-Al and Al-O-H bonds of 1.4 eV was in accordance with the previous report [9].…”

Section: Resultsmentioning

confidence: 99%

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Nakano

Akazawa

2013

IEICE Trans. Electron.

View full text Add to dashboard Cite

SUMMARYWe investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1 min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HF treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results.

show abstract

Section: Resultsmentioning

confidence: 99%

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Nakano

Akazawa

2013

IEICE Trans. Electron.

View full text Add to dashboard Cite

show abstract

“…Studies have been performed to optimize the conductivity and transmittance of ITO thin film for high property reproducibility during fabrication processes like DC and RF sputtering [10][11][12][13], electron beam evaporation [14] and physical vapor deposition [15]. A well-adopted improved method is the post-annealing of ITO film, in which different effecting parameters for various ITO fabrication processes have been optimized to improve the film properties [11,[16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Effects of multiple heat treatment cycles on structure, optical and electrical properties of indium-tin-oxide thin films

Guai

Song

et al. 2011

Surface and Coatings Technology

View full text Add to dashboard Cite

“…The observed values reveal that the valence states of In and Sn in the sample are mainly +3 and +4, respectively, which are consistent with the previous results. 6,15,28,29 Compared with the precursor, no noticeable change of the XPS signal was observed, except for the slight shift of the In 3d signal due to the microstructural change. However, differences were observed in the O 1s core level XPS spectra after thermal annealing.…”

Section: C·minmentioning

confidence: 97%

“…28,29 Therefore, the BE shift of the O 1s peak suggests that the microstructural change during the annealing process mainly occurs around the oxygen sites of the ITO nanoparticles. Figure 5 shows the temperature-dependent in situ DRIFT spectra of the In(OH) 3 precursor in the temperature range of 80-360 o C. The peak positions and intensities in the DRIFT spectra were found to be quite sensitive to the annealing temperature.…”

Section: +mentioning

confidence: 99%

Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

Kim¹,

Kim²,

Choi³

2012

Bulletin of the Korean Chemical Society

View full text Add to dashboard Cite

In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn-O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm −1.

show abstract

Effect of substrate temperature on the surface structure, composition and morphology of indium–tin oxide films

Cited by 63 publications

References 9 publications

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Effects of multiple heat treatment cycles on structure, optical and electrical properties of indium-tin-oxide thin films

Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

Contact Info

Product

Resources

About