Effect of Substrate Strain on Adsorption

Gsell, M.; Jakob, Peter M.; Menzel, D.

doi:10.1126/science.280.5364.717

Cited by 341 publications

(294 citation statements)

References 12 publications

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“…This intuitive physical scenario implies that after the formation of the InAs WL, the growth surface may be forced to be "chemically" unreactive because of the epitaxial compression or strain to additional indium atoms and arsenic molecules from the incident flux, and they should be forced to float or become temporarily physisorbed on the growth surface, instead of being chemically incorporated instantaneously into the surface lattice structure. The scenario described above is apparently consistent with experimental observations [310] of the chemical properties of an epitaxially strained Ru(0001) film. The chemisorption of O atoms and CO molecules to the compressively strained Ru(0001) surface is experimentally observed to be remarkably reduced.…”

Section: Indium Floatingsupporting

confidence: 87%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

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Section: Indium Floatingsupporting

confidence: 87%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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“…19 Gsell and co-workers showed experimentally that lattice strain modifi ed the chemisorption properties of the Ru(0001) metal surface considerably. Oxygen adsorption was found preferentially on the tensile strained zones upon local mechanical deformation of the surface by sub-surface Argon bubbles.…”

Section: Eff Ect Of Strain On Reactivity Of Metal Surfacesmentioning

confidence: 99%

“Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion

2014

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“…S train engineering offers a new route to tune the reaction and transport kinetics in oxide materials 1 by altering the inherent energy landscape of reactions, as demonstrated also for metals 2,3 and for polymers 4,5 . Strain can be induced in a material by lattice mismatch at the interface of a thin film with a substrate or with neighbouring layers (such as in multilayer composites).…”

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confidence: 99%

Edge dislocation slows down oxide ion diffusion in doped CeO2 by segregation of charged defects

2015

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Strained oxide thin films are of interest for accelerating oxide ion conduction in electrochemical devices. Although the effect of elastic strain has been uncovered theoretically, the effect of dislocations on the diffusion kinetics in such strained oxides is yet unclear. Here we investigate a 1/2o1104{100} edge dislocation by performing atomistic simulations in 4-12% doped CeO 2 as a model fast ion conductor. At equilibrium, depending on the size of the dopant, trivalent cations and oxygen vacancies are found to simultaneously enrich or deplete either in the compressive or in the tensile strain fields around the dislocation. The associative interactions among the point defects in the enrichment zone and the lack of oxygen vacancies in the depletion zone slow down oxide ion transport. This finding is contrary to the fast diffusion of atoms along the dislocations in metals and should be considered when assessing the effects of strain on oxide ion conductivity.

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Effect of Substrate Strain on Adsorption

Cited by 341 publications

References 12 publications

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

“Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion

Edge dislocation slows down oxide ion diffusion in doped CeO2 by segregation of charged defects

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