Effect of substrate rotation and rapid thermal annealing on thermoelectric properties of Ag-doped Sb2Te3 thin films

Thaowonkaew, Somporn; Insawang, Mekhala; Vora–ud, Athorn; Horprathum, Mati; Muthitamongkol, Pennapa; Maensiri, Santi; Kumar, Manish; Phan, Thắng Bách; Seetawan, Tosawat

doi:10.1016/j.vacuum.2023.111920

Cited by 11 publications

(2 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…236,237 Recently, heat in many integrated circuits are managed by the theory of thermal design power (TDP), and the reported TDP in computer chip increases to $120 W which is three times higher than other well-designed module. 238 Besides, the micro-bulk TE coolers in light-emitting diodes exhibit high performance in wide applications, for example, display screens, medical instruments and lighting. 239 Figure 15C illustrates the fabrication of LEDs on a micro-chip with p-type Bi 0.5 Sb 1.5 Te 3 and n-type Bi 2 Te 2.7 Se 0.3 legs to realize the thermal management in LEDs.…”

Section: Module Designingmentioning

confidence: 99%

“…Up to date, variety of devices have been made for high performance of thermal management, 231,232 for example, on‐chip 233–235 and microstructurally fabricated Bi 2 Te 3 thin film‐based cooling device as depicted in Figure 15A,B 236,237 . Recently, heat in many integrated circuits are managed by the theory of thermal design power (TDP), and the reported TDP in computer chip increases to ~120 W which is three times higher than other well‐designed module 238 . Besides, the micro‐bulk TE coolers in light‐emitting diodes exhibit high performance in wide applications, for example, display screens, medical instruments and lighting 239 .…”

Section: Module Designingmentioning

confidence: 99%

See 1 more Smart Citation

Recent advances, challenges, and perspective of copper‐based liquid‐like thermoelectric chalcogenides: A review

Basit

Xin

Murtaza

et al. 2023

EcoMat

View full text Add to dashboard Cite

As a group of emerging liquid‐like thermoelectric materials for waste heat recovery into useful energy, di‐chalcogenides Cu2(S, Se, Te) have been considered as superionic thermoelectric materials. Due to their highly disordered degree of Cu‐ion in the crystal lattice, Cu2(S, Se, Te) compounds can exhibit ultralow thermal conductivity, and in the meantime, their rigid sublattice can decently maintain the electrical performance, making them distinct from other state‐of‐the‐art thermoelectric materials. This review summarizes the well‐designed strategies to realize the impressive performance in thermoelectric materials and their modules by linking the adopted approaches such as defect engineering, interfaces, nano‐porous inclusions, thin films, dislocations, nano‐inclusions, and polycrystalline bulks etc., with the moderate design of the device. Some recent reports are selected to outline the fundamentals, underlined challenges, outlooks, and future development of Cu2(S, Se, Te) liquid‐like thermoelectric materials. We expect that this review covers the needs of future researchers in choosing some potential materials to explore thermoelectricity and other efficient energy conversion technologies.image

show abstract

Section: Module Designingmentioning

confidence: 99%

Section: Module Designingmentioning

confidence: 99%

Recent advances, challenges, and perspective of copper‐based liquid‐like thermoelectric chalcogenides: A review

Basit

Xin

Murtaza

et al. 2023

EcoMat

View full text Add to dashboard Cite

show abstract

Ultrahigh Power Factor of Sputtered Nanocrystalline N‐Type Bi₂Te₃ Thin Film via Vacancy Defect Modulation and Ti Additives

Gong,

Gao,

Kang

et al. 2024

Advanced Science

View full text Add to dashboard Cite

Magnetron‐sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n‐type Bi2Te3 thin films with an average grain size of ≈110 nm are prepared using high‐temperature sputtering and post‐annealing. Herein, it is demonstrated that high‐temperature treatment exacerbates Te evaporation, creating Te vacancies and electron‐like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre‐deposited Ti additives are ionized at high temperatures and partially diffused into Bi2Te3, resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1 µm thick n‐type Bi2Te3 thin film exhibits a room temperature resistivity as low as 3.56 × 10−6 Ω∙m. Notably, a 5 µm thick Bi2Te3 thin film achieves a record power factor of 6.66 mW mK−2 at room temperature, which is the highest value reported to date for n‐type Bi2Te3 thin films using magnetron sputtering. This work demonstrates the potential for large‐scale of high‐quality Bi2Te3‐based thin films and devices for room‐temperature TE applications.

show abstract

Advances in Flexible Thermoelectric Materials and Devices Fabricated by Magnetron Sputtering

Shi

Cao

et al. 2023

Small Science

View full text Add to dashboard Cite

Due to the direct conversion between thermal and electrical energy, thermoelectric materials and their devices exhibit great potential for power generation and refrigeration. With the rapid development of personal wearable electronics, the design of flexible inorganic thermoelectric materials and devices receives increasing attention. As one of the most mature thin‐film fabrication techniques, magnetron sputtering plays a key role in the fabrication of inorganic thermoelectric thin films and devices, but its progress is still not timely and comprehensively reviewed. Herein, recent advances in magnetron sputtering‐fabricated thermoelectric materials and devices are studied, including their thermoelectric properties, mechanical properties, and device design routes. The differences in the properties of thermoelectric materials under different sputtering conditions, as well as their underlying mechanisms, are carefully discussed. In the end, it is pointed out the challenges and future directions for magnetron sputtering‐prepared inorganic thermoelectric thin‐film materials and devices for practical applications. This review can serve as a useful reference to guide the design of inorganic thermoelectric materials and devices prepared by magnetron‐sputtering‐based deposition techniques.

show abstract

Effect of substrate rotation and rapid thermal annealing on thermoelectric properties of Ag-doped Sb2Te3 thin films

Cited by 11 publications

References 55 publications

Recent advances, challenges, and perspective of copper‐based liquid‐like thermoelectric chalcogenides: A review

Recent advances, challenges, and perspective of copper‐based liquid‐like thermoelectric chalcogenides: A review

Ultrahigh Power Factor of Sputtered Nanocrystalline N‐Type Bi₂Te₃ Thin Film via Vacancy Defect Modulation and Ti Additives

Advances in Flexible Thermoelectric Materials and Devices Fabricated by Magnetron Sputtering

Contact Info

Product

Resources

About

Effect of substrate rotation and rapid thermal annealing on thermoelectric properties of Ag-doped Sb2Te3 thin films

Cited by 11 publications

References 55 publications

Recent advances, challenges, and perspective of copper‐based liquid‐like thermoelectric chalcogenides: A review

Recent advances, challenges, and perspective of copper‐based liquid‐like thermoelectric chalcogenides: A review

Ultrahigh Power Factor of Sputtered Nanocrystalline N‐Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives

Advances in Flexible Thermoelectric Materials and Devices Fabricated by Magnetron Sputtering

Contact Info

Product

Resources

About

Ultrahigh Power Factor of Sputtered Nanocrystalline N‐Type Bi₂Te₃ Thin Film via Vacancy Defect Modulation and Ti Additives