Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition

Mughal, Asad J.; Walter, Timothy N.; Cooley, Kayla A.; Bertuch, Adam; Mohney, Suzanne E.

doi:10.1116/1.5074201

Cited by 21 publications

(22 citation statements)

References 35 publications

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“…The substrate always plays an important role in ALD and is particularly important for 2D materials (ix). [99,111,123,[126][127][128] The substrate affects the nucleation, diffusion, and crystallite orientation, for example. In epitaxial films, all of the nuclei ideally orient in the same way due to the matching structures of the film and substrate, which allows the growing nuclei to eventually merge together into a large monocrystalline film.…”

Section: Specialties In the Atomic Layer Deposition Of 2d Materialsmentioning

confidence: 99%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Specialties In the Atomic Layer Deposition Of 2d Materialsmentioning

confidence: 99%

“…- [224] Mo(N t Bu) 2 (NMe 2 ) 2 + H 2 S plasma 250 (750, S) a few ML-10 nm films (ann. ≈5-10 nm) - [127] Mo(N t Bu) 2 (NMe 2 ) 2 + PrSH 250-400 2 ML to 15 nm films (as-dep. amorp., ann.…”

Section: Atomic Layer Deposition Processes For 2d Metal Dichalcogenidesmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…Tuning electronic, optical, and magnetic properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) can be realized by introducing crystallographic defects, chemical doping, and mechanical strain. − Point defects such as vacancy, substitutional atom, and other defects like dislocation and grain boundary are critically important for tuning material properties amenable to the application like optoelectronic devices, spin polarizers, electrocatalysis, and so on. − Similarly, strain engineering via uniaxial tensile strain, bending of monolayers on soft substrate, and lattice mismatch strain between 2D materials and substrates, among others, are proven to be effective in controlling the optical emissions by tuning the band gap. Coupled interaction between strain and defects have also proven to be a powerful way to enhance the optical properties.…”

Section: Introductionmentioning

confidence: 99%

Interplay between Thermal Stress and Interface Binding on Fracture of WS₂ Monolayer with Triangular Voids

Verma

Kumar

Mukherjee

et al. 2022

ACS Appl. Mater. Interfaces

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The defect engineering of two-dimensional (2D) materials has become a pivotal strategy for tuning the electrical and optical properties of the material. However, the reliable application of these atomically thin materials in practical devices require careful control of structural defects to avoid premature failure. Herein, a systematic investigation is presented to delineate the complex interactions among structural defects, the role of thermal mismatch between WS2 monolayer and different substrates, and their consequent effect on the fracture behavior of the monolayer. Detailed microscopic and Raman/PL spectroscopic observations enabled a direct correlation between thermal mismatch stress and crack patterns originating from the corner of faceted voids in the WS2 monolayer. Aberration-corrected STEM-HAADF imaging reveals the tensile strain localization around the faceted void corners. Density functional theory (DFT) simulations on interfacial interaction between the substrate (Silicon and sapphire -Al2O3) and monolayer WS2 revealed a binding energy between WS2 and Si substrate is 20 times higher than that with a sapphire substrate. This increased interfacial interaction in WS2 and substrate-aided thermal mismatch stress arising due to difference in thermal expansion coefficient to a maximum extent leading to fracture in monolayer WS2. Finite element simulations revealed the stress distribution near the void in the WS2 monolayer, where the maximum stress was concentrated at the void tip.

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“…Among various semiconducting substrates, GaN with the least lattice mismatch of ≈0.8% for MoS 2 monolayer can be significant to the deposited unidirectional crystals and large area‐continuous film. [ 21–27 ] The GaN is mechanically and thermally stable wide bandgap semiconductor (3.4 eV) material having wurtzite crystal structure. [ 20,21,23,25–28 ] This also paves the way to build a MoS 2 /GaN heterojunction device for photodetector, light emitting devices (LEDs) as well as for various chemical sensor applications.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of MoS₂ Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications

Desai

Todankar

Ranade

et al. 2021

Crystal Research and Technology

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2D materials such as molybdenum sulfide (MoS2) integrated with conventional semiconductors lead to the fabrication of novel heterojunctions with pivotal electrical and optoelectronic properties. Herein, an approach is reported which addresses the growth of MoS2 crystals on the lattice‐matched Ga–polar gallium nitride (GaN) wafer using ammonium tetrathiomolybdate (ATM) as a precursor in a chemical vapor deposition (CVD) process, instead of using the molybdenum‐oxide‐based precursors. Unidirectional triangular MoS2 crystals and continuous film are obtained on the free‐standing Ga–polar GaN substrate. Further, the interface quality of the as‐synthesized MoS2 crystals and GaN wafer is explored by X‐ray photoelectron spectroscopy. It is observed that a good quality interface can be obtained by using the ammonia‐containing ATM precursor, where the surface oxygen at the interface is significantly less. A heterojunction device is fabricated with the synthesized MoS2 layer on GaN, showing excellent rectifying diode characteristics and a photovoltaic action with light illumination. This study reveals the suitability of the ammonia‐containing ATM precursor for the growth of MoS2 crystals on GaN in the CVD process to obtain a suitable heterostructure for device applications.

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Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition

Cited by 21 publications

References 35 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Interplay between Thermal Stress and Interface Binding on Fracture of WS₂ Monolayer with Triangular Voids

Synthesis of MoS₂ Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications

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Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition

Cited by 21 publications

References 35 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Interplay between Thermal Stress and Interface Binding on Fracture of WS2 Monolayer with Triangular Voids

Synthesis of MoS2 Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications

Contact Info

Product

Resources

About

Interplay between Thermal Stress and Interface Binding on Fracture of WS₂ Monolayer with Triangular Voids

Synthesis of MoS₂ Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications