Effect of substrate and Zn doping on the structural, optical and electrical properties of CdS thin films prepared by CBD method

Ma, Ligang; Ai, Xiaoqian; Wu, Xiaoshan

doi:10.1016/j.jallcom.2016.08.298

Cited by 101 publications

(36 citation statements)

References 35 publications

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“…The XRD patterns showed (100), (002), (110) and (112) peaks corresponding to hexagonal phase (figure 2(a)). Similar results have been reported by Ligang et al [18] and Kumar et al [19]. These groups have studied the effect of zinc incorporation on CdS films obtained by CBD and vacuum deposition techniques respectively.…”

Section: Resultssupporting

confidence: 84%

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashitha¹,

Priya²,

Ali³

et al. 2020

Mater. Res. Express

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The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of the films revealed the presence of several localized defects levels within the forbidden bandgap. The peak spectral response wavelength was found to vary from 500 nm to 400 nm with the increase of zinc. The photocurrent was found to increase with the Cd:Zn ratio. The films with relatively high concentrations of zinc were found to be better suited for the photodetector applications due to their higher photocurrent to dark current ratio.

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Section: Resultssupporting

confidence: 84%

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashitha¹,

Priya²,

Ali³

et al. 2020

Mater. Res. Express

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“…The number of crystallites per unit area (N) is in the range of (0.27-4.89) × 10 17 m −2 , increased with the increase of Zn dopant in CdS due to decrease in crystallite size of the films. Similar results have been reported by Ligang Ma et al [24] for Zn doped CdS thin films prepared by chemical bath deposition method. The microstrain (ε), dislocation density (δ) and stacking fault probability (α S ) of the films were calculated from the equations as reported in earlier literature [25,26].…”

Section: Characterizationsupporting

confidence: 90%

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

2020

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The present work is focussed on Zinc (2, 4, 6, 8 and 10 wt%) doped CdS thin films synthesized by sol-gel spin coating method and deposited on glass substrates. X-ray diffraction patterns of Zn doped CdS thin films exhibit cubic structure. The microstructural properties such as crystallite size, lattice constant, microstrain, dislocation density and stacking fault probability in the films were reported. The surface morphology and topography of the films was studied by using field emission scanning electron microscopy and atomic force microscopy. The incorporation of Zn in CdS and elemental composition of the films has been confirmed with X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). Raman spectrum of Zn doped CdS thin films exhibits 1LO and 2LO phonon modes. The optical band gap of CdS thin films increased from 2.63 to 2.73 eV with the increase of Zn dopant from 2 to 10%. Thermoelectric power measurements show negative Seebeck coefficient indicating n-type semiconducting behaviour. The carrier concentration of Zn doped CdS thin films at room temperature are found to be in the range of 10 19-10 20 cm −3 suggesting that the prepared films are degenerate semiconductors. The increase in thermal conductivity of Zn doped CdS thin film is due to the increase in carrier concentration of the films. The lattice thermal conductivity of Zn doped CdS thin films had an inverse temperature dependent and at high temperatures shows the dominance of phonon scattering.

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“…It shows clearly that, regardless of the deposition time, all the CdS films deposited in only one run present low crystalline ratios indicating the poor crystallinity of the films. This behavior can be attributed to the amorphous structure of the glass substrate [37,38]. However, the figure shows also that the (111) peak intensity of each sample increases speedily as the number of runs is 3 International Journal of Photoenergy increased.…”

Section: +mentioning

confidence: 95%

In Situ Low-Temperature Chemical Bath Deposition of CdS Thin Films without Thickness Limitation: Structural and Optical Properties

Ouafi

Jaber²,

Atourki

et al. 2018

International Journal of Photoenergy

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In this work, thin CdS films have been deposited using the chemical bath deposition technique (CBD). Different synthesis parameters, such as number of runs, deposition time, and postannealing temperature, are studied and optimized in order to avoid the supersaturation phenomenon and to achieve a low-temperature growth. CdS thin films, of cubic structure, oriented along the (111) direction with homogenous and smooth surface, have been deposited by using the CBD growth process without any annealing treatment. Based on a set of experimental observations, we show that the solution saturation phenomenon can be avoided if the deposition is performed in several runs at a short deposition time. Throughout the CBD technique, it is then possible not only to overcome any film thickness limitation but also to grow the CdS films in a single technological step at a low temperature and without any postdeposition annealing treatment. CdS films with excellent structural quality and a controllable thickness are obtained when the deposition bath temperature is fixed at 65°C. In addition, deposited films exhibit an optical transmittance ranging from 70 to 95% depending on the synthesis parameters, with band gap energy around 2.42 eV. The process developed in this work might be useful for depositing CdS films on flexible substrates.

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Effect of substrate and Zn doping on the structural, optical and electrical properties of CdS thin films prepared by CBD method

Cited by 101 publications

References 35 publications

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

In Situ Low-Temperature Chemical Bath Deposition of CdS Thin Films without Thickness Limitation: Structural and Optical Properties

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