Effect of Substrate and Annealing Ambient on the Conductivity of Sputtered MoSi2 Ceramic Thin Film

Mohammed, Bassam; Kaleli, Murat

doi:10.1007/s11664-020-08282-9

Cited by 4 publications

(2 citation statements)

References 22 publications

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“…MoSi 2 and WSi 2 meet all the above requirements, including a compatible growth process as thin films. [10][11][12] Recent works on MoSi 2 and WSi 2 demonstrated that both compounds may exhibit some topological features, such as non-trivial Berry phase (extracted from the quantum oscillations of magnetization) and extremely large magnetoresistance (XMR). [13,14] While the first effect is usually interpreted as the presence of non-trivial electronic states near the Fermi level, several other mechanisms (related to both topologically trivial and non-trivial character of electronic structure) have been suggested as explanations for XMR in various materials.…”

Section: Introductionmentioning

confidence: 99%

“…[25,26] However, there are many challenges and critical issues in growing single-crystalline MA 3 by deposition techniques due to high vapor pressure of Al, Ga and In. [27] In contrast, it has been shown that thin films of MoSi 2 can be easily prepared on different substrates, [11,12] thus providing an ideal platform for both basic and applied research.…”

Section: Introductionmentioning

confidence: 99%

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Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$

Pavlosiuk,

Swatek,

Wang

et al. 2022

Preprint

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We performed comprehensive theoretical and experimental studies of the electronic structure and the Fermi surface topology of two novel quantum materials, MoSi 2 and WSi 2 . The theoretical predictions of the electronic structure in the vicinity of the Fermi level was verified experimentally by thorough analysis of the observed quantum oscillations in both electrical resistivity and magnetostriction. We established that the Fermi surface sheets in MoSi 2 and WSi 2 consist of 3D dumbbell-shaped hole-like pockets and rosette-shaped electron-like pockets, with nearly equal volumes. Based on this finding, both materials were characterized as almost perfectly compensated semimetals. In conjunction, the magnetoresistance attains giant values of 10 4 and 10 5 % for WSi 2 and MoSi 2 , respectively. In turn, the anisotropic magnetoresistance achieves −95 and −98 % at T = 2 K and in B = 14 T for WSi 2 and MoSi 2 , respectively. Furthermore, for both compounds we observed the Shoenberg effect in their Shubnikov-de Haas oscillations that persisted at as high temperature as T = 25 K in MoSi 2 and T = 12 K in WSi 2 . In addition, we found for MoSi 2 a rarely observed spin-zero phenomenon. Remarkably, the electronic structure calculations revealed type-II Dirac cones located near 480 meV and 710 meV above the Fermi level in MoSi 2 and WSi 2 , respectively.

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