Digest of Technical Papers.1990 Symposium on VLSI Technology 1990
DOI: 10.1109/vlsit.1990.110993
|View full text |Cite
|
Sign up to set email alerts
|

Effect of stress in passivation layer on electromigration lifetime for vias

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2010
2010
2010
2010

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 0 publications
0
1
0
Order By: Relevance
“…On the other hand, Nishimura et al (Nishimura, Okuda, Ueda, Hirata and Yano 1990) studied the effect of stress in the passivation layer on the electromigration lifetime of the vias. They found that the median time to failure for the via chain with the slope angle of 55 • is about 1/18 times shorter than that with the slope angle of 85 • , despite a better step coverage of Al film in the via with slope angle of 55 • .…”
Section: Use Of Passivation Layermentioning
confidence: 99%
“…On the other hand, Nishimura et al (Nishimura, Okuda, Ueda, Hirata and Yano 1990) studied the effect of stress in the passivation layer on the electromigration lifetime of the vias. They found that the median time to failure for the via chain with the slope angle of 55 • is about 1/18 times shorter than that with the slope angle of 85 • , despite a better step coverage of Al film in the via with slope angle of 55 • .…”
Section: Use Of Passivation Layermentioning
confidence: 99%