2020
DOI: 10.1007/s10853-020-04551-4
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Effect of strains on the optical and magnetic properties of Ce-doped ZnO with O or Zn vacancies

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Cited by 12 publications
(2 citation statements)
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“…The compressive strain widened band gap [37]. In addition, because of the Burstein-Moss effect also make the band gap widened [38]. The increase in the optical band gap brings it closer to the band gap width of p-type semiconductor materials and reaching better optical behavior for preparing ZnO heterostructured thin-film [39].…”
Section: Optical Propertiesmentioning
confidence: 99%
“…The compressive strain widened band gap [37]. In addition, because of the Burstein-Moss effect also make the band gap widened [38]. The increase in the optical band gap brings it closer to the band gap width of p-type semiconductor materials and reaching better optical behavior for preparing ZnO heterostructured thin-film [39].…”
Section: Optical Propertiesmentioning
confidence: 99%
“…The exchange–correlation interaction in the generalized gradient approximation (GGA)+U method with Perdew, Burke, and Ernzerh of (PBE) function was used for geometry optimization and energy calculation [ 58 ]. The effective Hubbard U values 10 and 6 were used for Zn-3d and O-2p, respectively [ 59 ]. We adopted the same U value of O for N atom in Zn 8 N 1 O 7 .…”
Section: Methodsmentioning
confidence: 99%