Effect of Strain in Epitaxially Grown SrRuO₃Thin Films on Crystal Structure and Electric Properties

Microstructure and Electrical Conductivity of Epitaxial SrRuO<SUB>3</SUB> Thin Films Prepared on (001), (110) and (111) SrTiO<SUB>3</SUB> Substrates by Laser Ablation

“…Figure 8 summarized the electrical conductivity of epitaxial (001), (110) and (111) SRO thin films in literatures and the present study. 4,11,12,14,15) The electrical conductivity of epitaxial SRO thin films were almost the same as those of SRO single crystals (3.5 to 5.0 SÁm À1 ). The epitaxial SRO thin films prepared by MOCVD had a flat surface in the case of the (001) and (110) SRO thin film, while the (111) SRO thin film with rough surface exhibited the highest electrical conductivity.…”

“…The c-axis length of epitaxial (001) SRO thin films have been reported as 0.396 to 0.400 nm. [12][13][14]24) We calculated the d-values of epitaxial SRO thin films in the growth directions, assuming that the inplane lattice parameters of the films were constrained to the values of STO substrates without changing the unit cell volume (60.698 nm 3 ). The d-values of (001), (110) and (111) planes were calculated as 0.398, 0.281 and 0.230 nm, respectively.…”

“…It is reported that an expansion of c-axis induced by ion irradiation would cause the change of conduction behavior from metallic to semi-conductor like accompanying the decrease in T C from 160 K to 110 K. 20) Although the SRO thin films obtained in the present study showed the expansion of c-axis, no change of conduction behavior was observed. 4,[11][12][13][14]16,19,24) However, the T C of epitaxial SRO thin films were 10 K lower than that of single-crystals, ranging from 160 to 170 K. 5,27,28) This might be affected by lattice stress in the films.…”

“…[6][7][8][9][10] Since SRO has a good chemical stability and lattice matching to wide ranged oxides, epitaxial SRO thin films has been prepared on various single-crystal substrates such as SrTiO 3 (STO), 4,[11][12][13][14][15][16][17] LaAlO 3 , 18,19) MgO, 20) YSZ 21) and Si. 22) STO is particularly advantageous in preparing high quality epitaxial SRO thin films because the lattice parameter of STO (a ¼ 0:391 nm) is almost the same as that of SRO (a ¼ 0:393 nm).…”

A Hydrothermally Deposited Epitaxial PbTiO3 Thin Film on SrRuO3 Bottom Electrode for the Ferroelectric Ultra-High Density Storage Medium

“…Atomic force microscope observation revealed an atomic step of 0.4 nm at the SrTiO 3 substrate surface. A 50 nm thick epitaxial SrRuO 3 film was RF magnetron sputtered on this substrate as a bottom electrode [14,23]. Before applying SrRuO 3 /SrTiO 3 , we used Nb doped SrTiO 3 substrate to provide conductivity as a bottom electrode for PZT deposition, although measured DE hysteresis curve had been strongly distorted.…”