Effect of Sr doping on the magnetocapacitive effect in Bi0.6Sr0.4FeO3−δ polycrystalline ceramics

Rajesh, R.; Ethilton, S. John; Ramachandran, K.; Kumar, K. Ramesh; Vadla, Samba Siva; Banu, I. B. Shameem

doi:10.1007/s00339-018-1941-6

Cited by 7 publications

(2 citation statements)

References 36 publications

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“…The decrease in the size of the platelike structures with K doping is possibly due to the lattice distortion induced by the replacement of small-sized Sn with large-sized K and also due to the decrease in average crystallite size when K doping increases. This results in a decrease in grain size [24]. The elemental composition was confirmed for all the samples through EDAX as shown in Fig.…”

Section: X-ray Diffractionmentioning

confidence: 68%

Optical and dielectric properties of potassium-doped tin selenide polycrystals

Nerella¹,

Suresh

Bathulapalli³

2022

J Mater Sci: Mater Electron

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In our current study, we have investigated the effect of potassium doping on AC conductivity and the dielectric properties of tin selenide (SnSe). Potassiumdoped SnSe (K x Sn 1-x Se with x = 0-20 mol%) polycrystals were synthesized via hydrothermal method. The phase of the synthesized samples was confirmed to be single phase with orthorhombic structure as obtained by X-ray diffraction. The average crystallite size for all the K x Sn 1-x Se samples was calculated using the Debye-Scherrer formula and they were found to be decreased as potassium (K) concentration increased. Scanning electron microscope revealed plate-like morphology for all K x Sn 1-x Se samples. Transmission electron microscope studies at high resolution showed plate-like morphology which is connected with small nanorods for the K 0.20 Sn 0.80 Se. Optical studies were carried out using UV-Vis-NIR diffuse reflectance spectroscopy. The bandgap values were found to be decreased as K concentration is increased. Temperature-dependent dielectric studies were studied for all K x Sn 1-x Se samples. Correlated barrier hopping is responsible for the transport of charge carriers in the conduction mechanism. Electrical modulus studies reveal a non-Debye-type dielectric relaxation phenomenon. The results of dielectric studies specify the application of K-doped SnSe in frequency related and capacitive storage devices.

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Section: X-ray Diffractionmentioning

confidence: 68%

Optical and dielectric properties of potassium-doped tin selenide polycrystals

Nerella¹,

Suresh

Bathulapalli³

2022

J Mater Sci: Mater Electron

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“…We have doped divalent Sr +2 on A site i.e., Bi 0.6 Sr 0.4 FeO 3 (BSFO) as it is known that partial substitution on A-site might assist in increasing the electric and magnetic behavior or might stabilize the perovskite system in cubic or tetragonal phase with significant decrease in secondary phases [2]. It has been reported by various researchers that doping of Sr +2 on BFO improved magnetic field induced electric polarization, enhanced multiferroic characteristics and its magnetic coupling, as pointed out by Rajesh et al [2][3][4][5]. Bi 0.6 Sr 0.4 FeO 3 has been chosen explicitly with an intention of getting magnetic effect contributing to the RS response.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field control and swift heavy ion beam assisted tuning of resistive switching properties of BSFO/CFO/LNO heterostructures

Thankachen¹,

Chhaya²,

Tripathi³

et al. 2023

Phys. Scr.

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Resistive switching (RS) behavior in mixed oxide insulators has shown a great promise as memristors or non-volatile resistive random-access memory (RRAM) applications. For dilute magnetic oxide multilayers, a novel approach of controlled defects induced and the magnetic field control of RS behavior is proposed. Resistive switching in Bi0.6Sr0.4FeO3 /CoFe2O4 /LaNiO3 (BSFO /CFO /LNO) multilayer heterostructures has been investigated as a case study. All oxide junctions consisting of conducting LaNiO3 (LNO) bottom electrode and BSFO-CFO active layers were fabricated by using chemical solution deposition. A set of samples were irradiated with 150 MeV Ag11+ ions for three different ion fluence of ~ 1×10+11 ions/cm2, 1×10+12 ions/cm2 and 5×10+12 ions/cm2. Polycrystalline phase pure films with smooth, crack free surfaces were observed for pristine and irradiated samples. Optical spectroscopy revealed a decrease in the transmittance upon increasing ion fluence due to increase in the light scattering centres. The optical band gap showed a systematic decrease from 2.09 eV to 1.65 eV with increasing ion fluence. Room temperature I-V characteristics showed consistent and pronounced bipolar switching for all samples below ± 5 V. Upon applied magnetic fields of 0.58 T, the resistive switching ratios were found to increase significantly and were further tuned by 150 MeV Ag11+ ion beam irradiations. The magnetic field control of electrical transport properties in the controlled defect assisted oxide heterojunctions offers new insights to the existing understanding of oxide-based RS mechanism.

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