Effect of sputtering power on the properties of ZnO:Ga transparent conductive oxide films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

“…By comparison, it is helpful to understand relations between the process parameters and the resulting film properties. There are several papers to report the optical and electrical properties of GZO films [26][27][28][29]. To evaluate the performance of GZO thin films, we can make a comparison between the literatures and this work on the optical and electrical properties of GZO thin films.…”

“…To evaluate the performance of GZO thin films, we can make a comparison between the literatures and this work on the optical and electrical properties of GZO thin films. Ahna et al [26] presented GZO films prepared by pulsed DC magnetron sputtering with rotating target applying various sputtering powers. The GZO films are transparent to visible light ( = 380-750 nm) and that their transmittances at = 550 nm are higher than 80%.…”

“…Pulsed DC sputtering [26] >80% at = 550 nm 4.89 × 10 −4 1-3.5 kW RF magnetron sputtering [27] NA 3.45 × 10 −4 100-200 W RF magnetron sputtering [28] 86.7% 1.9 × 10 −4 100-200 W RF magnetron sputtering [29] 86.5% (400-800 nm) 6 …”

“…The GZO film showed the lowest resistivity of 3.45 × 10 −4 cm at optimized processing parameters of 350 • C, 6 mTorr and 200 W. But they did not report the optical properties of GZO films. For comparison, we list the literature values [26][27][28][29] for the related properties of GZO films affected by sputtering power. Table 1 shows the comparisons between the literatures and this work on the optical and electrical properties of GZO films.…”

Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

“…However, high cost, the scarcity of indium and toxicity of indium compound (including ITO) powders make researchers develop substitutive materials [5]. Among various alternatives, impurity doped zinc oxide (ZnO) has been attracting a great deal of attention as an alternative for ITO due to its high electrical conductivity, high optical transmittance and high infrared reflectance in the visible spectrum [6,7]. Moreover, ZnO is non-toxic, inexpensive, abundant, and mechanically strong, which is important for the fabrication and operation of solar cells.…”