Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Jeon, Kun-Rok; Min, Byoung‐Chul; Park, Youn-Ho; Jo, Younghun; Park, Seung-Young; Park, Chang-Yup; Shin, Sung‐Chul

doi:10.1063/1.4733478

Cited by 12 publications

(12 citation statements)

References 30 publications

(28 reference statements)

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“…However, in the previous studies, most of them are focused on the tunnel materials selection and interface properties between magnetic electrodes and semiconductors [6][7][8][9][10][11][12][13][14] with relatively high spin polarization magnetic metal electrodes, such as Fe [4], CoFe [15] and NiFe [16,17]. In fact, the properties of the magnetic metal thin films, applied as electrodes, should have a significant effect on the spin injection efficiency [18].…”

Section: Introductionmentioning

confidence: 97%

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Lü

Huang

Wang

et al. 2015

Journal of Magnetism and Magnetic Materials

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Section: Introductionmentioning

confidence: 97%

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Lü

Huang

Wang

et al. 2015

Journal of Magnetism and Magnetic Materials

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“…Importantly, in this work, the authors identified a source of spin relaxation in the random fields arising from interface roughness, thus highlighting the crucial role of oxide/Ge interface quality in electrical spin injection. A following study, confirming this effect, reported an additional and competing depolarization mechanism due to magnetic stray fields localized at the interface, due to the proximity of the FM contact [195]. Quite quickly, the use of FM tunnel contacts in three-terminal geometry allowed researchers to observe spin accumulation signals up to room temperature [196][197][198].…”

Section: Electrical Spin Injection In Gementioning

confidence: 63%

Progress towards Spin-Based Light Emission in Group IV Semiconductors

et al. 2017

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Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: the core materials of mainstream microelectronics. In particular, we describe the rapid pace of progress in the achievement of lasing action in the notable case of Ge-based heterostructures and devote special attention to the pivotal role played by optical investigations in advancing the understanding of the rich spin physics of group IV materials. Finally, we scrutinize recent developments towards the monolithic integration on Si of a new class of spin-based light emitting devices having prospects for applications in fields such as cryptography and interconnects.

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“…3a and 3b, significant normal Hanle signals (DV TH, normal ) with the Lorentzian line shape similar to that of DV EH (see Fig. 2a) were observed at 300 K. The inverted Hanle signals (DV TH, inverted ) 27,28 in B x (Figs. 3c and 3d), roughly half the magnitude of the DV TH, normal , were also clearly measured.…”

mentioning

confidence: 67%

“…Clear electrical Hanle signals (DV EH ) with a Lorentzian line shape are detected at RT. It should be noted that the full spin accumulation (Dm) consists of the inverted Hanle signal (DV EH, inverted ) in B x and the normal Hanle signal (DV EH, normal ) in B z 27,28 . As shown in Figs.…”

mentioning

confidence: 99%

Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

Jeon¹,

Min²,

Park³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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Understanding the interplay between spin and heat is a fundamental and intriguing subject. Here we report thermal spin injection and accumulation in CoFe/MgO/n-type Ge contacts with an asymmetry of tunnel spin polarization. Using local heating of electrodes by laser beam or electrical current, the thermally-induced spin accumulation is observed for both polarities of the temperature gradient across the tunnel contact. We observe that the magnitude of thermally injected spin signal scales linearly with the power of local heating of electrodes, and its sign is reversed as we invert the temperature gradient. A large Hanle magnetothermopower (HMTP) of about 7.0% and the Seebeck spin tunneling coefficient of larger than 0.74 meV K 21 are obtained at room temperature.T he tremendous power consumption and accompanying heat generation in current electronic devices requires alternative technologies to provide a solution for the energy issues and to realize the energy efficient electronics. Spintronics is a viable route for it, using the spin degree of freedom in addition to the conventional charge transport 1 . Recently another important ingredient, namely heat, appears on the stage. It has been reported that the temperature gradient and heat flow in ferromagnetic structures gives rise to a variety of spin related phenomena 2 . Understanding the interplay between heat and spin transport is a fundamental and intriguing subject but also offers unique possibilities for emerging electronics based on the combination of thermoelectrics and spintronics.Especially in SC-based spintronics, the functional use of heat provides a new route to inject and control of spin in semiconductors (SCs) 3 . The generation of non-equilibrium spin populations (i.e. spin accumulation) in nonmagnetic SC is a central issue of SC-based spintronics 1,3-5 . Significant progress has been made on the spin accumulation in various SC systems by means of circularly polarized light 4,6 , spin-polarized tunneling 7-13 , hotelectron spin filtering 14,15 , spin-orbit interaction 16,17 , or magnetization dynamics 18,19 .Intriguingly, Le Breton et al. 20 have reported a rather different mechanism for the spin accumulation, in which temperature difference across a ferromagnet (FM)/oxide/SC tunnel contact can induce the spin accumulation (Dm) in SC via Seebeck spin tunneling (SST). It was found that the SST effect, involving thermal transfer of spin angular momentum from FM to SC without a tunneling charge current, is a purely interface-related phenomenon of the tunnel contact and governed by the energy dependence of its tunnel spin polarization (TSP) 20 . This provides a conceptually new mechanism for the generation of Dm in SC as well as for the functional use of heat in spintronic devices 20 . The SST and thermal spin accumulation (Dm th ) in p-type SC (e.g., p-type Si) have been intensely studied, using a Ni 80 Fe 20 /Al 2 O 3 /SiO 2 /p-SC contact with the asymmetry in TSP of tunneling holes 20 . However, the counterpart of n-type SC still needs to be explored...

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Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Cited by 12 publications

References 30 publications

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Progress towards Spin-Based Light Emission in Group IV Semiconductors

Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

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