Effect of solvent on nanostructure and thermoelectric properties of bismuth

Kulsi, Chiranjit; Dhara, Palash; Mitra, Mandar; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

doi:10.1007/s12648-015-0772-y

Cited by 5 publications

(1 citation statement)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, ZnO nanorods shape has higher electrical conductivity than that of the spherical NP shape. This was attributed to the excess of carrier concentrations [43] and the length of NRs, which facilitate electrons passing through the structure with a greater electrical diffusion allowance [44]. In addition, zT can possibly increase with variation in the microwave experimental parameters conditions such as microwave power, reaction time, NSs sizes, and solvent quantity.…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%

Microwave Irradiation to Produce High Performance Thermoelectric Material Based on Al Doped ZnO Nanostructures

et al. 2020

View full text Add to dashboard Cite

Microwave irradiation is found to be effective to provide highly crystalline nanostructured materials. In this work, this technique has been used to produce highly improved thermoelectric (TE) material based on aluminum (Al) doped zinc oxide (ZnO) nanostructures (NSs). The effect of Al dopant at the concentration range 0.5–3 mol % on the structural and TE properties has been investigated in more details. The optimum concentration of Al for better TE performance is found to be 2 mol %, which could significantly increase the electrical conductivity and reduce the thermal conductivity of ZnO NSs and thus enhance the TE performance. This concentration showed almost metallic conductivity behavior for ZnO NSs at low temperatures, e.g., below 500 K. The electrical conductivity reached 400 S/m at room temperature, which is around 200 times greater than the value recorded for the pure ZnO NSs. Remarkably, the measured room temperature thermal conductivity of the microwave synthesized ZnO NSs was very low, which is around 4 W/m·K. This value was further reduced to 0.5 W/m·K by increasing the Al doping to 3 mol %. The figure of merit recorded 0.028 at 675 K, which is 15 times higher than that of the pure ZnO NSs. The output power of a single leg module made of 2 mol % Al doped ZnO NSs was 3.7 µW at 485 K, which is higher by 8 times than that of the pure sample. These results demonstrated the advantage of the microwave irradiation rout as a superior synthetic technique for producing and doping promising TE nanomaterials like ZnO NSs.

show abstract

Section: Thermoelectric Propertiesmentioning

confidence: 99%