Abstract:Cuprous oxide (Cu2O) thin films have been grown on both soda lime glass (SLG) microscope slides and Fluorine-doped Tin Oxide (FTO) substrates by a modified SILAR technique. The pH level of the bath solution was systematically varied in the range of 4.50 – 7.95 to elucidate their effect on the physical properties of the deposited product. The prepared films showed compact surface morphology composed of spherical grains evident from their SEM images. The XRD measurement showed that the as-deposited films were si… Show more
“…The optical bandgap (Eg) of these samples were estimated from the Tauc plot 10 generated by using transmission data and were calculated in the range, Eg = (1.95 -2.20) eV. The Eg dependence of ED Cu2O on deposition voltages can be attributed to the variation film thickness and grain size of the films as observed by others 2,10 . Further experimental investigations are currently in progress to elucidate the effect crystallite orientation and exposed faceted surface of the ED Cu2O thin films for their possible integration atop the vertically aligned (0001) ZnO NRs grown on oriented ZnO seeding layers by different method 11 .…”
Section: Resultsmentioning
confidence: 93%
“…The XRD results confirmed the polycrystalline single phase cubic Cu2O structure 4,8 for all samples electrodeposited at -0.3 V to -1.0 V. It is also clear that crystal growth was largely influenced by deposited voltage. The average crystallite domain size were estimated in the range of in the range 30 -73 nm by applying Scherrer equation 10 From SEM micrographs and XRD patterns, it is conspicuous that grains/crystals shape are octahedral cuboids of Cu2O with a strong (111) orientation at -0.3 V deposition voltage (cf. Figure 2 films is seen at λ ≈ 475 nm, while the feature at λ ≈300 nm for films deposited at -0.3 V is due to the incoherent surface morphology exposing the underlying substrate 5 (cf.…”
Section: Resultsmentioning
confidence: 99%
“…The optical bandgap (Eg) of these samples were estimated from the Tauc plot 10 generated by using transmission data and were calculated in the range, Eg = (1.95 -2.20) eV. The Eg dependence of ED Cu2O on deposition voltages can be attributed to the variation film thickness and grain size of the films as observed by others2,10 .…”
Highly textured phase pure Cu2O thin films have been grown by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). The surface morphology characterized by Scanning Electron Microscopy (SEM) revealed that the deposited thin films coherently carpet the underlying substrate and composed of sharp faceted well-define grains of 0.5 -1.0 µm sizes. XRD analyses showed that all films are composed of polycrystalline cubic Cu2O phase only and have average crystalline domain size in the range 30 -73 nm. The preferred crystalline orientation of phase pure Cu2O films were found to be changing from ( 200) to (111) with increasing cathodic voltages and showed highest ( 111) and ( 200) crystalline texture coefficient while grown at -1.0 and -0.8 V respectively. Optical bandgap of the as-grown samples were calculated in the range (1.95 -2.20) eV using UV-Vis Transmission data. The performance of copper oxide films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.
“…The optical bandgap (Eg) of these samples were estimated from the Tauc plot 10 generated by using transmission data and were calculated in the range, Eg = (1.95 -2.20) eV. The Eg dependence of ED Cu2O on deposition voltages can be attributed to the variation film thickness and grain size of the films as observed by others 2,10 . Further experimental investigations are currently in progress to elucidate the effect crystallite orientation and exposed faceted surface of the ED Cu2O thin films for their possible integration atop the vertically aligned (0001) ZnO NRs grown on oriented ZnO seeding layers by different method 11 .…”
Section: Resultsmentioning
confidence: 93%
“…The XRD results confirmed the polycrystalline single phase cubic Cu2O structure 4,8 for all samples electrodeposited at -0.3 V to -1.0 V. It is also clear that crystal growth was largely influenced by deposited voltage. The average crystallite domain size were estimated in the range of in the range 30 -73 nm by applying Scherrer equation 10 From SEM micrographs and XRD patterns, it is conspicuous that grains/crystals shape are octahedral cuboids of Cu2O with a strong (111) orientation at -0.3 V deposition voltage (cf. Figure 2 films is seen at λ ≈ 475 nm, while the feature at λ ≈300 nm for films deposited at -0.3 V is due to the incoherent surface morphology exposing the underlying substrate 5 (cf.…”
Section: Resultsmentioning
confidence: 99%
“…The optical bandgap (Eg) of these samples were estimated from the Tauc plot 10 generated by using transmission data and were calculated in the range, Eg = (1.95 -2.20) eV. The Eg dependence of ED Cu2O on deposition voltages can be attributed to the variation film thickness and grain size of the films as observed by others2,10 .…”
Highly textured phase pure Cu2O thin films have been grown by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). The surface morphology characterized by Scanning Electron Microscopy (SEM) revealed that the deposited thin films coherently carpet the underlying substrate and composed of sharp faceted well-define grains of 0.5 -1.0 µm sizes. XRD analyses showed that all films are composed of polycrystalline cubic Cu2O phase only and have average crystalline domain size in the range 30 -73 nm. The preferred crystalline orientation of phase pure Cu2O films were found to be changing from ( 200) to (111) with increasing cathodic voltages and showed highest ( 111) and ( 200) crystalline texture coefficient while grown at -1.0 and -0.8 V respectively. Optical bandgap of the as-grown samples were calculated in the range (1.95 -2.20) eV using UV-Vis Transmission data. The performance of copper oxide films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.
“…Figure 2 a reveals that all the films were polycrystalline in nature with (111) preferential growth. The intensity of the (111) plane of Cu 2 O is increased with increasing the concentration of NaCl electrolyte (2–8 mmol) which indicates the improvement of the crystalline quality of the deposited films [23]. Figure 2( a ) XRD pattern and ( b ) Raman spectra of the samples deposited on SLG substrate in the presence of an NaCl electrolyte with various concentrations.…”
Cuprous oxide (Cu
2
O) nanorods have been deposited on soda-lime glass substrates by the modified successive ionic layer adsorption and reaction technique by varying the concentration of NaCl electrolyte into the precursor complex solution. The structural, electrical and optical properties of synthesized Cu
2
O nanorod films have been studied by a variety of characterization tools. Structural analyses by X-ray diffraction confirmed the polycrystalline Cu
2
O phase with (111) preferential growth. Raman scattering spectroscopic measurements conducted at room temperature also showed characteristic peaks of the pure Cu
2
O phase. The surface resistivity of the Cu
2
O nanorod films decreased from 15 142 to 685 Ω.cm with the addition of NaCl from 0 to 4 mmol and then exhibited an opposite trend with further addition of NaCl. The optical bandgap of the synthesized Cu
2
O nanorod films was observed as 1.88–2.36 eV, while the temperature-dependent activation energies of the Cu
2
O films were measured as about 0.14–0.21 eV. Scanning electron microscope morphologies demonstrated Cu
2
O nanorods as well as closely packed spherical grains with the alteration of NaCl concentration. The Cu
2
O phase of nanorods was found stable up to 230°C corroborating the optical bandgap results of the same. The film fabricated in presence of 4 mmol of NaCl showed the lowest resistivity and activation energy as well as comparatively uniform nanorod morphology. Our studies demonstrate that the nominal presence of NaCl electrolytes in the precursor solutions has a significant impact on the physical properties of Cu
2
O nanorod films which could be beneficial in optoelectronic research.
“…In one study, the pH was varied between 7.95 and 4.50 by adding acetic acid and the influence of the reduction in pH was reflected in an enhanced oriented growth along the (111) plane. [207] An increase in crystallinity and also crystallite size was observed with increasing the pH, with the sharper, most intense diffraction peaks observed in samples prepared from pH 7.95 solutions. The second study describes Cu 2 O prepared from cationic precursor solutions of different pH values (7.33, 3.45, and 2.35) along with an anionic precursor with a pH of ≈13.…”
Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.
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