Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions

Design of frustrated Lewis pair in defective TiO2 for photocatalytic non-oxidative methane coupling

“…In order to guide the design of TiO 2 -based FLP for CH 4 activation, DFT calculations were rst carried out to screen out an ideal model through metal doping strategy. Metal ions (M) of Ga 3+ , Zn 2+ , In 3+ and Ti 3+ as typical p-type dopants which are prone to forming Lewis acid were adopted to construct FLP in TiO 2 [27][28][29][30][31][32] .…”