Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−−Ge Sn  layers on SiO2

Yamaha, Takashi; Kurosawa, Masashi; Ohmura, Takuma; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

doi:10.1016/j.sse.2015.01.005

Cited by 9 publications

(8 citation statements)

References 19 publications

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“…Peaks corresponding to the Ge-Ge bond (∼300 cm −1 ) and Si-Ge bond (∼390 cm −1 ) are seen in the spectrum. 11,28 Another peak located at ∼475 cm −1 can be seen for the films deposited at 400 °C and 450 °C. This corresponds to the Si-Si bond and is observed in the Raman spectra for these films due to the high Si content present in the films.…”

Section: Resultsmentioning

confidence: 94%

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

Vanjaria

Arjunan

Salagaj

et al. 2020

ECS J. Solid State Sci. Technol.

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SiGeSn is a promising group IV semiconducting alloy to advance the field of silicon photonics. The bandgap of the alloy can be tuned by varying its' Si and Sn concentrations for developing devices in the near infrared (NIR) range. The growth of the material using a cost-effective process is still challenging due to various obstacles. In this work, a simplified in-house assembled plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit SiGeSn films. Plasma allows for the use of commercially available precursors (GeH 4 , Si 2 H 6 and SnCl 4 ) while providing high dissociation and deposition growth rates. Polycrystalline films were deposited at susceptor temperatures in the range of 350 °C-450 °C to study the effect of process temperature on the Sn segregation and Sn incorporation in the films. Selective area growth (SAG) of SiGeSn films was also achieved by depositing films on patterned silicon substrates. The composition of the films was characterized by Rutherford Back Scattering while the structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy. Selectively grown films were fabricated into basic test photodiodes and evaluated for electrical performance under NIR illumination.

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Section: Resultsmentioning

confidence: 94%

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

Vanjaria

Arjunan

Salagaj

et al. 2020

ECS J. Solid State Sci. Technol.

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“…Peaks corresponding to the Ge-Ge bond (∼300 cm −1 ) and Si-Ge bond (∼390 cm −1 ) are seen in the spectrum. 27 The absence of a distinctive Ge-Sn peak (∼260 cm −1 ) can be due to the low concentration of Sn present in the film. However, the Ge-Ge peaks shift towards lower wavenumbers than their expected positions.…”

Section: Resultsmentioning

confidence: 99%

“…However, the Ge-Ge peaks shift towards lower wavenumbers than their expected positions. 27,36 The Raman peak shift (Δω) can be attributed to two factors-the substitution of Sn and Si in the Ge lattice (Δω alloy ) and the combination of strain and disorder present in the lattice (Δω strain+disorder ). The source of the strain in the film is the thermal stress from the difference in coefficient of thermal expansion between the film and substrate and the difference in the lattice constants between Si, Ge and Sn while the disorder is due to the various lattice imperfections present in the polycrystalline film such as grain boundaries and lattice defects.…”

Section: Resultsmentioning

confidence: 99%

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PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

Vanjaria

Arjunan

Salagaj

et al. 2020

ECS J. Solid State Sci. Technol.

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SiGeSn is a promising group IV material to develop the field of silicon photonics. Increasing the tin concentration in the alloy is desired in order to achieve a direct bandgap in the material. This necessitates low temperature growth and proper strain management in the films during growth to prevent tin segregation. In this work, plasma enhanced chemical vapor deposition (PECVD) was used to grow composition graded SiGeSn films at low processing temperatures of 350 °C-380 °C using a simplified PECVD reactor. Polycrystalline films were deposited using a multi-step approach to prevent tin phase separation at higher Sn concentrations by alleviating the strain arising from the incorporation of Sn in the film lattice. Rutherford Back Scattering measurements indicated that films with Sn content of up to 8% without any Sn phase segregation were achieved. The structural and optical properties of the films were analyzed using X-ray diffraction and Raman spectroscopy.

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“…On the other hand, the implementation of the polycrystalline material into the thermoelectric device is another option to reduce the thermal conductivity. 22) Although the poly-Si 1-x-y Ge x Sn y having high Si and Sn content is expected to have most low thermal conductivity, it has been hardly reported yet, except few reports about Ge-rich poly-Si 1-x-y Ge x Sn y , 23) due to the higher crystallization temperature for Si resulting in the low Sn incorporation due to its low solubility limit in Si and Ge.…”

Section: Introductionmentioning

confidence: 99%

SiSn mediated formation of polycrystalline SiGeSn

Shimura

Okado

Motofuji

et al. 2022

Jpn. J. Appl. Phys.

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Si1-xSnx and Si1-x-yGexSny polycrystalline thin layers were grown using Sn nanodots as crystal nuclei. Si1-xSnx crystallization occurred around Sn nanodots, and the substitutional Sn content was estimated as high as 1.5%. In the case of the poly-Si1-x-yGexSny, Ge and Si were deposited simultaneously on the Sn nanodots, however, Ge was preferentially incorporated into the Sn nanodots, resulting in the formation of the poly-Si1-x-yGexSny with amorphous Si residue. It was found that the poly-Si1-xSnx formed by the Sn nanodots mediated formation can be used as the new virtual substrate to be alloyed with Ge, namely the 2step formation process consisting of poly-Si1-xSnx crystallization and Ge alloying with the Si1-xSnx is the effective formation process for the poly-Si1-x-yGexSny formation. This non-equilibrium process with achieving crystallization resulted in the substitutional Si and Sn content in the as-grown poly-Si1-x-yGexSny as high as 19.4% and 3.4%, respectively.

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Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−−Ge Sn layers on SiO2

Cited by 9 publications

References 19 publications

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

SiSn mediated formation of polycrystalline SiGeSn

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