Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

Lee, Jae Uk; Lee, Deuk Hee; Kwon, Beomjin; Hyun, Dow-Bin; Nahm, Sahn; Baek, Seung Hyub; Kim, Jin Sang

doi:10.1007/s11664-014-3598-z

Cited by 10 publications

(2 citation statements)

References 20 publications

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“…Thus, modification of distortion could deteriorate the phonon scattering and enhance thermal conductivity with respect to doping concentration [67]. As (Bi 1-x Sn x ) 2 Te 2.7 Se 0.3 shows semiconducting behavior of n-type, heat flow is monodirectional, only because of free electron density [68]. The present reported thermal conductivity of single crystal Bi 2 Te 3 shows a decrease in thermal conductivity (0.6 W/mK) in comparison to our previously reported polycrystal Bi 2 Te 3 (3.0 W/mK) at 300 K [16] due to the peierls distortion [69].…”

Section: Thermal Conductivitymentioning

confidence: 99%

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Hegde

Prabhu

Chattopadhyay

2021

J Mater Sci: Mater Electron

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In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R$$\overline{3 }$$ 3 ¯ m space group. The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n-type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3.

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Section: Thermal Conductivitymentioning

confidence: 99%

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Hegde

Prabhu

Chattopadhyay

2021

J Mater Sci: Mater Electron

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“…Test materials are Bi 2 Te 3− x Se x (n-type) and Bi 2− x Sb x Te 3 (p-type) fabricated via various processes such as hot extrusion, spark plasma sintering (SPS)13, and hot press14. As the TE properties such as α , ρ , and k of the materials all affect the PTEs34568910, testing several materials enables to see the link between the PTEs and TE properties, and helps to confirm the validity of the developed method.…”

Section: Sample Preparationmentioning

confidence: 99%

Harman Measurements for Thermoelectric Materials and Modules under Non-Adiabatic Conditions

Roh

Lee

Kang

et al. 2016

Sci Rep

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Accuracy of the Harman measurement largely depends on the heat transfer between the sample and its surroundings, so-called parasitic thermal effects (PTEs). Similar to the material evaluations, measuring thermoelectric modules (TEMs) is also affected by the PTEs especially when measuring under atmospheric condition. Here, we study the correction methods for the Harman measurements with systematically varied samples (both bulk materials and TEMs) at various conditions. Among several PTEs, the heat transfer via electric wires is critical. Thus, we estimate the thermal conductance of the electric wires, and correct the measured properties for a certain sample shape and measuring temperature. The PTEs are responsible for the underestimation of the TEM properties especially under atmospheric conditions (10–35%). This study will be useful to accurately characterize the thermoelectric properties of materials and modules.

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Synthesis and Properties of Bismuth Selenide Based Nanolaminates for Application in Thermoelectrics

Andzane

Felsharuk

Buks

et al. 2022

Adv Materials Inter

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In this work, simple and cost‐effective phyiscal vapor deposition method is applied for deposition of single Bi2Se3, Bi1.925Sn0.075Se3, Bi2Se2.975Te0.025 ultrathin films of average thickness 10–12 nm, and for the fabrication of n‐type 5‐layer nanolaminates. The nanolaminates are composed from alternating doped and undoped ultrathin films. Electrical and thermoelectric properties (Seebeck coefficient, resistivity, electron thermal conductivity, charge carrier concentration, and mobility) of nanolaminates as well as single ultrathin undoped and doped films are studied at room temperature under ambient conditions. Both types of nanolaminates show 75–125% increase of the Seebeck coefficient accompanied by the 65–85% reduction of the electron thermal conductivity in comparison with the nanostructured bulk materials of similar chemical compositions. The mechanisms underlying such improvement of properties of studied nanolaminates in comparison with the nanostructured bulk counterparts are discussed.

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Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

Cited by 10 publications

References 20 publications

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Harman Measurements for Thermoelectric Materials and Modules under Non-Adiabatic Conditions

Synthesis and Properties of Bismuth Selenide Based Nanolaminates for Application in Thermoelectrics

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