Effect of Sn Doping on the Properties of ZnO Thin Films Prepared by Spray Pyrolysis

Chahmat, N.; Haddad, Ammar; Ain-Souya, A.; Ganfoudi, R.; Attaf, N.; Ghers, M.

doi:10.4236/jmp.2012.311222

Cited by 38 publications

(7 citation statements)

References 17 publications

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“…It is also assumed that the absorption coefficient near the band edge shows an exponential dependence on photon energy and this dependence is given as follows [28] [29] ( )…”

Section: 3uv-visible Spectrophotometer (U-vis)mentioning

confidence: 99%

Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

Zegadi¹,

Abdelkebir²,

Chaumont³

et al. 2014

AMPC

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In this work, Undoped Zinc Oxide (ZnO) and Sn-doped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. The Scanning Electron Microscopy (SEM) showed that the morphological surface of the films was affected by Sn low doping. The X-Ray Diffraction (XRD) patterns showed that all films have polycrystalline structures, and the doping incorporation has not lead to substantial changes in the structural characteristics of ZnO films. The crystallite size was calculated using the well-known Scherrer's formula and found to be in the range of 23 -40 nm. The measurements from UV-Visible Spectrophotometer (U-Vis) indicated that the highest average optical transmittance in the visible region was related to Undoped ZnO film, then the optical band gap and Urbach energy values of thin films were calculated. The X-Ray Photoelectron Spectroscopy (XPS) has demonstrated that Sn is incorporated in ZnO lattice.

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“…It is also assumed that the absorption coefficient near the band edge shows an exponential dependence on photon energy and this dependence is given as follows [28] [29] ( )…”

Section: 3uv-visible Spectrophotometer (U-vis)mentioning

confidence: 99%

Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

Zegadi¹,

Abdelkebir²,

Chaumont³

et al. 2014

AMPC

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“…AJILI, et al (2013) [17] suggests that the transmittance of the ZnO layer decreases for higher tin percentage, due to the formation of a thicker layer that reduces the transmittance of the film. CHAHMAT, et al (2012) [21] observed lower transmittance range when increasing the tin doping from 4% to 6% and 8%. GANESH, et al (2017) [22] also observed a tendency for lower transmittance at higher tin load and indicates the thickness as the main reason for such an event.…”

Section: Optical Characterizationmentioning

confidence: 95%

Effects of tin on the performance of ZnO photoanode for DSSC

et al. 2021

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Tin Zinc Oxide thin films were deposited on transparent conductive oxide by chemical bath, at percentages of 5, 10 and 15% of tin (Sn) on the zinc oxide (ZnO) structure. All films were thermally treated to improve its crystallinity. The produced films with tin were characterized by x-ray diffraction and optical measurements, such as absorbance, transmittance and reflectance. The x-ray spectrum showed the formation of the ZnO wurtzite and the crystallite size of the films were calculated to be 53.74; 79.59 and 66.38 nm for the photoanodes at 5, 10 and 15% of tin (Sn), respectively, on the zinc oxide structure. The calculated band gap energy of the films revealed that the presence of tin can reduce the band gap energy to about 3.2 eV. Those films were used as photoanodes on dye sensitized solar cells (DSSC) to observe the effects of the tin (Sn) on the photovoltaic activity of the zinc oxide (ZnO) semiconductor. Parameters such as efficiency and short circuit current density were particularly affected by the presence of tin in the composition, with the 5% Sn ZnO film presenting the best results of 7.56 % efficiency and 34.35 mA/cm2, short circuit current density, the other films presented lower values for efficiency, which can be attributed to lower values of short-current density.

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“…В соответствии с [29,30] величина E g со-ответствовала точке пересечения с осью энергий hν прямой, полученной экстраполяцией на hν линейной части зависимости функции Кубелки−Мунка. Степень разупорядочения структуры CuI оценивали по величине энергии Урбаха E o , которую определяли, согласно [31], как котангенс угла наклона линейного участка зависимости ln[− ln(T o )] от hν вблизи значения hν = E g ∼ 3 эВ. Фактор светорассеяния (H f , Haze factor) рассчитывали в соответствии с [27] как отношение диффузного отражения R к полному отражению (сумме диффузного и зеркального отражений).…”

Section: методика экспериментаunclassified

Гетероструктура Для Обращенного Диода На Основе Электроосажденного В Импульсном Режиме Наномассива Оксида Цинка И Изготовленной Методом SILAR Пленки Иодида Меди

Клочко¹,

Kopach²,

Хрипунов³

et al. 2018

Физика И Техника Полупроводников

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A heterostructure promising for designing a backward diode is formed from a zinc-oxide nanorod array and a nanostructured copper-iodide film. The effect of modes of successive ionic layer adsorption and reaction (SILAR) deposition and the subsequent iodization of CuI films on smooth glass, mica, and fluorine-doped tin oxide (FTO) substrates and on the surface of electrodeposited nanostructured zinc-oxide arrays on the film structure and electrical and optical properties is investigated. A connection between the observed variations in the structure and properties of this material and intrinsic and iodination-induced point defects is established. It is found that the cause and condition for creating a backward-diode heterostructure based on a zinc-oxide nanoarray formed by pulsed electrodeposition and a copper-iodide film grown by the SILAR method is the formation of a p ^+-CuI degenerate semiconductor by the excessive iodination of layers of this nanostructured material through its developed surface. The n -ZnO/ p ^+-CuI barrier heterostructure, which is fabricated for the first time, has the I – V characteristic of a backward diode, the curvature factor of which (γ = 12 V^–1) confirms its high Q factor.

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Effect of Sn Doping on the Properties of ZnO Thin Films Prepared by Spray Pyrolysis

Cited by 38 publications

References 17 publications

Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

Effects of tin on the performance of ZnO photoanode for DSSC

Гетероструктура Для Обращенного Диода На Основе Электроосажденного В Импульсном Режиме Наномассива Оксида Цинка И Изготовленной Методом SILAR Пленки Иодида Меди

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