Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

Zhu, Yicheng; Lü, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

doi:10.1016/j.spmi.2017.04.035

Cited by 6 publications

(2 citation statements)

References 40 publications

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“…According to previous reports, deep localized centers in quantum wells are mainly composed of In-rich InGaN clusters (some type of self-assembled In-rich quantum dots) formed by In segregation [ 21 , 22 , 23 ]. The In segregation is influenced by the growth of an LT GaN cap layer which directly covers the InGaN well layer.…”

Section: Resultsmentioning

confidence: 99%

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

et al. 2023

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GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through the temperature-dependent (TD) PL spectra, it was found that when the cap layer was too thick, the localized states of the quantum wells were relatively non-uniform. The thicker the well layer, the worse the uniformity of the localized states. Furthermore, through micro-area fluorescence imaging tests, it was found that when the cap layer was too thick, the luminescence quality of the quantum well was worse. In summary, the uniformity of the localized states in the quantum wells and the luminescence characteristics of the quantum wells could be improved when a relatively thin cap layer of the quantum well was prepared during the growth. These results could facilitate high efficiency QW preparation, especially for green LEDs.

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Section: Resultsmentioning

confidence: 99%

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

et al. 2023

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“…[8][9][10] The authors of 11 proposed a formula to calculate the periodicity fluctuation of superlattices, which was widely adopted by some other researchers. [12][13][14][15][16] It is an easy-to-use method and also has relative high precision. Nevertheless, we find there remain some deviations in calculating InGaN/GaN MQW light emitting diode (LED) structures when using this formula.…”

mentioning

confidence: 99%

Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction

Die

Shen

et al. 2019

Appl. Phys. Express

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X-ray diffraction patterns are widely used to calculate the periodicity fluctuation of multiple quantum wells (MQWs). Nonetheless, we find the commonly used formula sometimes cannot give an exact linear relationship between the full width at half maximum and the satellite peak orders. Here, based on the formula, we deduce a more accurate formula to characterize the periodicity fluctuations in InGaN/GaN MQWs. The revised formula has higher linearity correlation degree and the calculated interface roughness coincides well with X-ray reflectivity measurement results.

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Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Kempisty,

Ahmad,

Strak

et al. 2023

Computational Materials Science

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Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

Cited by 6 publications

References 40 publications

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells

Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction

Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

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