Effect of SiO/sub 2/ passivating layer in segmented silicon planar detectors on the detector response

Verbitskaya, E.; Eremin, V.; Ruggiero, G.; Roe, S.; Weilhammer, P.; Egorov, N. N.; Golubkov, S.; Konkov, K.; Kozlov, Yu. F.; Sidorov, A. I.

doi:10.1109/tns.2005.856907

Cited by 6 publications

(28 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The physical thicknesses, pitches, strip widths and layer dimensions of the modelled strip sensor configurations are given in table 1. The comparison between experimental results and simulations were carried out on sensor designs in figures 1a and 1c with parameters as close to the real sensors as possible (AC-coupled strips, thickness 285 µm and resistivity 3-4 kΩ · cm for the ATLAS and DC-coupled strips, thickness 300 µm and resistivity 5 kΩ · cm for the Ioffe Institute design, respectively [5,6]). For a simulation investigation focused on the differences in strip configurations, a modified ATLAS-design strip sensor structure (figure 1b and table 1), with equal physical thickness, strip coupling and interstrip gap to Ioffe Institute design, was applied.…”

Section: Tcad Simulation Procedures and Set-upmentioning

confidence: 99%

“…Refs. [5,6]. With the intensity set to 20 W/cm 2 , this resulted in laser generated e-h pair density of about 345 µm −2 .…”

Section: Tcad Simulation Procedures and Set-upmentioning

confidence: 99%

“…With the intensity set to 20 W/cm 2 , this resulted in laser generated e-h pair density of about 345 µm −2 . Two laser spot diameters were used in the simulations, a 10 µm which was also the diameter applied in the measurement set-up [5,6,23] and a 1 µm to enable scanning beyond experimentally available resolution. The red laser allows the investigation of a transient signal generated separately by the drift of electrons or holes (depending on which side of the detector is being illuminated) [24].…”

Section: Tcad Simulation Procedures and Set-upmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…closest to the position of charge injection [4]. Later bipolar current pulse and negative charge signals from the adjacent strips were observed from non-irradiated planar Si strip detectors with a p-on-n structure [5,6] where nonequilibrium carriers were generated via illumination of the detector strip side by a focused red laser pulse.The signals were recorded in the scanning mode and the negative charge signal reached up to 60% of the positive one [6]. The results were qualitatively explained by formation of a potential minimum under the Si-SiO 2 interface due to the positive charge in the SiO 2 layer.…”

mentioning

confidence: 99%

See 4 more Smart Citations

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

et al. 2017

Self Cite

View full text Add to dashboard Cite

Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required.Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations.As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p + implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO 2 interface charge densities (Q f ) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p + implant the negative response vanishes and the collected charge at the active strip increases respectively.The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q f , that enables negligible * Work performed in the framework of the CERN-RD50 collaboration. losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem. IntroductionSegmented silicon detectors, like micropixel and microstrip, are the primary detector types used in inner trackers of the Large Hadron Collider (LHC) experiments [1,2,3]. Due to the high luminosity of the proton beam and the high counting rate the detectors with fast response to fit the short shaping time of 20-25 ns are required. The detectors must operate in a high-radiation environment for at least 10 years, maintaining a sufficient performance regardless of the accumulating degradation of the silicon properties.The development and testing of advanced detectors include detailed studies of the detector current and charge responses using e.g. sub-nanosecond lasers, which enable to simulate the interaction of short or long range (MIP) particles with the detector. This gives information on the carrier transport in the detector bulk and the electric field distribution which are the input data for the prediction of the long-term scenario of the detector position sensitivity and charge collection efficiency (CC...

show abstract

Section: Tcad Simulation Procedures and Set-upmentioning

confidence: 99%

“…Refs. [5,6]. With the intensity set to 20 W/cm 2 , this resulted in laser generated e-h pair density of about 345 µm −2 .…”

Section: Tcad Simulation Procedures and Set-upmentioning

confidence: 99%

Section: Tcad Simulation Procedures and Set-upmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Poehlsen

Fretwurst

Klanner

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

a b s t r a c tUsing multi-channel time-resolved current measurements (multi-TCT), the charge collection of p þ n silicon strip sensors for electron-hole pairs produced close to the Si-SiO 2 interface by a focussed subnanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO 2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p þ n silicon sensors is discussed.

show abstract

Spectra distortion by the interstrip gap in spectroscopic silicon strip detectors

et al. 2012

View full text Add to dashboard Cite

The NUSTAR experiments to be carried out as the part of the FAIR program (Facility for Antiproton and Ion Research) now under development in GSI, Germany, require unique spectrometers for heavy ions, for an energy range between a hundred keV up to hundreds of MeV. These spectrometers are constructed on the basis of silicon double sided detectors capable of providing simultaneously the energy spectrum of the particles and the position of hit points. The double sided Si strip detectors for high resolution ion spectroscopy and tracking were developed by the PTI-RIMST consortium. Reduced sized detectors were studied with alpha-particles from a 238 Pu source to define the spectral response of their p + side. The energy resolution was measured and found to be the highest, 9.6 keV, in the p + strips area. The energy spectrum for the particles hit at the interstrip gap was shown to be much broader and have a maximum at the low energy edges. In this study the alpha-particle spectra were measured on the p + side of strip detector and their shape was found to depend on the p + strip structure and potential distribution under the strip and in the interstrip gap, where the surface is passivated by SiO 2 layer. Therefore, the 2D potential distribution in the interstrip gap was simulated and interpreted through the effective entrance window for alpha-particles. The calculated spectrum of a detector from alpha-particle source has a shape specific to the experimental detector spectral response, i.e., the peak at low energies. These findings are to be taken into account in the analysis of short range particle spectra and may well contribute to further development of spectroscopic single sided and double sided Si strip detectors to be used in investigations in nuclear physics.

show abstract

Effect of SiO/sub 2/ passivating layer in segmented silicon planar detectors on the detector response

Cited by 6 publications

References 6 publications

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Spectra distortion by the interstrip gap in spectroscopic silicon strip detectors

Contact Info

Product

Resources

About