Effect of silicon orientation and hydrogen anneal on tunneling from Si into SiO2

Weinberg, Z. A.; Hartstein, A.

doi:10.1063/1.332319

Cited by 60 publications

(21 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 (filled symbols) as a function of n. The Y IPE increases proportionally with n, which implicates the Si conduction band as the source of electrons, while the Y PST increases only by a factor of 2-3 for n increasing by 2 orders of magnitude. The absence of correlation between n and Y PST as well as between E B and the conduction band offset both indicate that the initial states of electrons involved in the PST are not related to the semiconductor conduction band, in contrast with previous belief [15]. Instead, the reproducibility of E B among different structures and its weak field sensitivity suggest that the PST current originates from oxide defects located so close to the substrate that they may be permanently refilled so as to provide a stable-in-time PST current.…”

contrasting

confidence: 80%

“…1(a). These were fitted by the expression [13][14][15] where A is a constant proportional to the density of initial electron states, m ox 0.5m 0 is the electron effective mass in the oxide, m 0 the electron rest mass, and E B the energy of the initial state of the electron measured relative to the SiO 2 conduction band. The curves shown represent the fitting results indicating the PST data to be well accounted for by the FN model.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

1997

View full text Add to dashboard Cite

Experiments on the photon stimulated tunneling of electrons at the interfaces of SiO 2 with Si and SiC demonstrate the presence of defects with electron binding energy of 2.8 eV relative to the SiO 2 conduction band, well above the semiconductor band gap. These defects, which so far escaped direct detection, are located near interfacial oxide layers, their density being sensitive to the silicon enrichment of SiO 2 . The discovered defects appear to be the origin of the trap-assisted electron injection phenomena in SiO 2 . [S0031-9007(97)02708-7]

show abstract

contrasting

confidence: 80%

mentioning

confidence: 99%

Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

1997

View full text Add to dashboard Cite

show abstract

“…7 and 8) upon VUV exposure and electrical stress, which may be due to the modification of the 2.8 eV deep center by H. It should be mentioned here that the strong effect of hydrogen annealing on this photocurrent is long known. 38 The previously reported correlation of the 2.8 eV deep electron states with Si enrichment of the oxide 39 suggests these centers to be related to Si-Si links or O-vacancies in the SiO 2 . Similarly to the irradiation-induced O-vacancy/interstitial pairs, 20 the 2.8 eV deep electron states may serve as H retention sites leading to trap formation (nonbridging oxygen centers and hydrogenated O-vacancies) accounting for the electron transport across the oxide.…”

Section: Discussionmentioning

confidence: 95%

Hydrogen‐Related Leakage Currents Induced in Ultrathin SiO2 / Si Structures by Vacuum Ultraviolet Radiation

Afanasʼev

Stesmans

1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

Degradation of thin SiO 2 insulators used in Si-based metal-oxidesemiconductor (MOS) electronic devices in terms of electrical conduction may result in various ways: electrical stress, 1-5 irradiation, 6-8 ion implantation, 9 etc. Particularly vulnerable are ultrathin (oxide thickness, d OX < 10 nm) oxides, which may have a detrimental effect on device performance, e.g., on data retention in electrically erasable memory elements. 6 Development of electrical conduction of initially superb insulating SiO 2 layers points toward the generation of some imperfections (defects) that provide underbarrier pathways for the charge carriers between the electrodes of MOS structures. It is now well established that some kind of electron trap is generated in SiO 2 by injected charge carriers 10-14 and, likely also hydrogen, 5,11 giving rise to leakage current. However, the nature of the traps remains unclear, the main reason being the local nature of the typically studied leakages induced by electrical stress: A small area conductive region may have large impact on the total current across the MOS insulator, but is hardly accessible for physical characterization.In the present work, we compare the electrical conduction of ultrathin SiO 2 layers (d OX ϭ 3-6 nm) induced by conventional electrical stress of the MOS structure and by irradiation with vacuum ultraviolet (VUV) photons. This is successfully studied here because the VUV-induced degradation proceeds in a laterally uniform manner as it is related to the laterally uniform optical absorption. By combining the electrical analysis with photoionization and electron spin resonance (ESR) spectroscopy we will demonstrate two mechanisms involved in the generation of the degradation-induced leakage current. First, there are traps correlated with the presence of atomic hydrogen in the oxide which behave similarly to the donor-like Si/SiO 2 interface states observed in MOS structures with thicker oxides. 15-17 These states are thermally unstable, i.e., they anneal slowly already at room temperature, to disappear completely at 180ЊC after 10 min. They were suggested to be formed by H bonding to the bridging oxygen atoms in SiO 2 resulting in a configuration resembling the hydronium ion (H 3 O) ϩ . 17,18 Second, there are thermally stable oxide traps, related to oxide network damage: the hydrogenated oxygen vacancies and, probably, nonbridging oxygen centers. The current-voltage (I-V) characteristics and the annealing behavior of VUV-irradiated oxides is found to be similar to that observed after electrical stressing suggesting these defects to account largely for the stress-induced leakage currents in ultrathin SiO 2 .Experimental The samples were prepared by oxidation of low-doped p-and ntype Si(100) substrates at 800ЊC in N 2 ϩ 10% O 2 in an industrial cleanroom facility. 19 The oxide thickness was in the range 2.9-5.9 nm as determined ellipsometrically. The thicker oxides (d OX ϭ 36 nm) were grown in dry oxygen at 1000ЊC. MOS capacitors were defined by thermal evaporation of semitr...

show abstract

“…The EM viewpoint is illustrated schematically in However, little if any orientation dependence is found experimentally in the barrier to tunneling [4,[12][13][14], suggesting a strong k -breaking interaction across the interface. To date, this apparent lack of k conservation has been ascribed to disorder in the oxide, interface roughness [4,15], and phonon scattering [15].…”

Section: Tight Binding Versus Effective-mass Theorymentioning

confidence: 98%

Tight-binding investigation of electron tunneling through ultrathin SiO2gate oxides

Städele

Tuttle

Hess

et al. 2000

Superlattices and Microstructures

View full text Add to dashboard Cite

Effect of silicon orientation and hydrogen anneal on tunneling from Si into SiO2

Abstract: Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors Appl. Phys. Lett. 105, 142108 (2014); 10.1063/1.4898009Effect of hydrogen annealing on secondharmonic generation from SiO2/Si(111) interfaces J.

Cited by 60 publications

References 11 publications

Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

Hydrogen‐Related Leakage Currents Induced in Ultrathin SiO2 / Si Structures by Vacuum Ultraviolet Radiation

Tight-binding investigation of electron tunneling through ultrathin SiO2gate oxides

Contact Info

Product

Resources

About