Effect of silicon-nanoparticle addition on the nanostructure of polythiophene: Fullurene bulk heterojunction solar cells

Kim, Joonhyeon; Nam, Sungho; Jeong, Jaehoon; Kim, Hwajeong; Kim, Youngkyoo

doi:10.3938/jkps.61.234

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…Miniature and flexible solar cells have been attracting considerable attention in a variety of applications such as wireless sensor networks and robots [1][2][3][4][5]. In comparison to rigid solar cell panels, miniature and flexible solar cells are more applicable to irregular objects or to being embedded into portable devices and clothes [1,2].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Thickness and Doping Concentration in p- and n-Type Poly-Si Layers on the Efficiency of a Solar Cell Based on a Carbon Fiber

Yoon¹,

Shim²,

Han³

2015

Journal of the Optical Society of Korea

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We investigated the effects of the thickness and doping concentration in p-and n-type poly-Si layers on the performance of a solar cell based on a carbon fiber in order to improve the energy conversion efficiency of the cell. The short-circuit current density and open-circuit voltage of the carbon fiber-based solar cell were significantly influenced by the thickness and doping concentration in the p-and n-type poly-Si layers. The solar cell efficiency was successfully enhanced to ~10.5%.

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Section: Introductionmentioning

confidence: 99%

Influence of the Thickness and Doping Concentration in p- and n-Type Poly-Si Layers on the Efficiency of a Solar Cell Based on a Carbon Fiber

Yoon¹,

Shim²,

Han³

2015

Journal of the Optical Society of Korea

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Improved Photovoltaic Performance of MEH‐PPV/PCBM Solar Cells via Incorporation of Si Nanocrystals

Yan

Yang

et al. 2013

Chin. J. Chem.

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We have studied the effect of silicon nanocrystals (SiNCs) as a third component on performance of organic bulk heterojunction solar cells composed of poly[2-methoxy,5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend film. By adding suitable amounts of SiNCs into MEH-PPV:PCBM blend, the device performance such as external quantum efficiency, short circuit current density (J SC ), and power conversion efficiency (PCE) improved. Incorporation of 2.5% SiNCs in the blend led to 13.6% improvement of J SC , which in turn resulted in 18% improvement of PCE up to 2.28%. The improved performance was mainly due to the improvements both in the charge generation from the interface of MEH-PPV/SiNCs and the charge collection at the cathode.

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Hybrid Phototransistors Based on Bulk Heterojunction Films of Poly(3-hexylthiophene) and Zinc Oxide Nanoparticle

Nam

Seo

Park

et al. 2013

ACS Appl. Mater. Interfaces

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Hybrid phototransistors (HPTRs) were fabricated on glass substrates using organic/inorganic hybrid bulk heterojunction films of p-type poly(3-hexylthiophene) (P3HT) and n-type zinc oxide nanoparticles (ZnO(NP)). The content of ZnO(NP) was varied up to 50 wt % in order to understand the composition effect of ZnO(NP) on the performance of HPTRs. The morphology and nanostructure of the P3HT:ZnO(NP) films was examined by employing high resolution electron microscopes and synchrotron radiation grazing angle X-ray diffraction system. The incident light intensity (P(IN)) was varied up to 43.6 μW/cm², whereas three major wavelengths (525 nm, 555 nm, 605 nm) corresponded to the optical absorption of P3HT were applied. Results showed that the present HPTRs showed typical p-type transistor performance even though the n-type ZnO(NP) content increased up to 50 wt %. The highest transistor performance was obtained at 50 wt %, whereas the lowest performance was measured at 23 wt % because of the immature bulk heterojunction morphology. The drain current (I(D)) was proportionally increased with P(IN) due to the photocurrent generation in addition to the field-effect current. The highest apparent and corrected responsivities (R(A) = 4.7 A/W and R(C) = 2.07 A/W) were achieved for the HPTR with the P3HT:ZnO(NP) film (50 wt % ZnO(NP)) at P(IN) = 0.27 μW/cm² (555 nm).

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Effect of silicon-nanoparticle addition on the nanostructure of polythiophene: Fullurene bulk heterojunction solar cells

Cited by 5 publications

References 21 publications

Influence of the Thickness and Doping Concentration in p- and n-Type Poly-Si Layers on the Efficiency of a Solar Cell Based on a Carbon Fiber

Influence of the Thickness and Doping Concentration in p- and n-Type Poly-Si Layers on the Efficiency of a Solar Cell Based on a Carbon Fiber

Improved Photovoltaic Performance of MEH‐PPV/PCBM Solar Cells via Incorporation of Si Nanocrystals

Hybrid Phototransistors Based on Bulk Heterojunction Films of Poly(3-hexylthiophene) and Zinc Oxide Nanoparticle

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