Effect of Silicon Doping in B–Te (B₄Te₆) Binary Ovonic Threshold Switch System

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

“…Increasing the B content in the B x Te y series effectively reduced both slopes (Figure S4), indicating a more random atomic network that renders a widened E g with more localized states on the band tails. Note that our measured E g values (∼0.59 to 0.77 eV) were larger than the ones (<∼0.50 eV for B 4 Te 6 ) reported by Hwang and co-workers. We also found the Fermi level ( E f ) of our B 3 Te 7 is ∼0.28 eV above the valence band mobility edge ( E v ) (Figure e).…”

“…In this work, we improved the OTS performances of the B 3 Te 7 -based S units, exhibiting a larger nonlinearity (>∼10 6 ) with a suppressed I off (∼0.1 nA), and a wider programming window (>∼0.7 V) due to the more distinguishable V h and V th , while also delivering a slightly slower switching speed and a quite smaller I on density brought by the much larger BEC size, as compared to the literatures. ,, We also unraveled the OTS physics from the perspective of electronic excitation via ab initio molecular dynamics (AIMD) simulations. We observed reversible semiconductor-metal transitions that could reflect the switching principles of the selectors.…”

Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

“…[56][57][58] In addition, elements such as B, C, N, Ga, Al, and Zn could also be effective dopants to decrease hypervalent bonding or form potential binary OTS materials, such as BSe and GaSe. [59][60][61] Other than doping, changing the stoichiometry (e.g., increasing the concentration of Te, Se, and S elements) of chalcogenide glasses is also an effective approach to control hypervalent bonding without adding new elements to materials. As shown in Figure 7, popular OTS glass such as GeSe 2 and GeTe 6 exhibit less hypervalent bonding than GeSe and GeTe.…”

Statistical modeling of V th distribution in ovonic threshold switches based on physical switching models

“…Equation (11) indicates that the scaled distribution is transformed into a Weibull distribution with the same shape parameters as those of the original Weibull distribution.…”

“…Recent studies have reported many switching mechanisms and their corresponding properties. [4][5][6][7][8][9][10][11][12][13][14][15][16] Physical considerations and models have been presented based on variations in the properties of the material and structure. However, although various distribution functions, such as Weibull, normal, and lognormal distributions, have been used to describe the distributional properties of the functions, no rationale for their selection has been presented.…”