Effect of SiC ceramics on thermoelectric properties of SiC/SnSe composites for solid-state thermoelectric applications

Ju, Heongkyu; Kim, Jooheon

doi:10.1016/j.ceramint.2016.03.035

Cited by 34 publications

(25 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To synthesize polycrystalline SnSe, various methods have been explored, such as melting, arc‐melting, mechanical alloying, solid state reaction, and hydrothermal, or solvothermal methods . To achieve a high ZT , texturing and doping have been two key approaches to enhance S 2 σ and/or reduce κ, from which the ZT values have been improved from 0.1 to ≈1.7 (p‐type), although such ZT values are still much lower than their single crystal counterparts due to their relatively high κ and low S 2 σ …”

Section: Introductionmentioning

confidence: 99%

“…[54,55] To achieve a high ZT, texturing and doping have been two key approaches to enhance S 2 σ and/or reduce κ, from which the ZT values have been improved from 0.1 to ≈1.7 (p-type), although such ZT values are still much lower than their single crystal counterparts due to their relatively high κ and low S 2 σ. [52,[56][57][58][59][60] Considering the requirement of both p-type and n-type thermoelectric materials for composing the thermoelectric In this study, a record high figure of merit (ZT) of ≈1.1 at 773 K is reported in n-type highly distorted Sb-doped SnSe microplates via a facile solvothermal method. The pellets sintered from the Sb-doped SnSe microplates show a high power factor of ≈2.4 µW cm −1 K −2 and an ultralow thermal conductivity of ≈0.17 W m −1 K −1 at 773 K, leading a record high ZT.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

Shi

Zheng

Liu

et al. 2018

Advanced Energy Materials

129

View full text Add to dashboard Cite

figure of merit (ZT) is defined as ZT = S 2 σT/κ = S 2 σT/(κ e +κ l ), where S, σ, κ, κ e , κ l , and T are the Seebeck coefficient, the electrical conductivity, the total thermal conductivity, the electrical thermal conductivity, the lattice thermal conductivity, and the absolute temperature, respectively. [3,5] A high powder factor (S 2 σ) and a low κ are required to achieve a high ZT value. [6][7][8] So far, significant efforts have been devoted to enhancing S 2 σ and/or reduce κ. [9] For the strategies of achieving high S 2 σ, resonant state doping, [10][11][12] band converging, [13][14][15][16] minority carrier blocking, [17,18] and quantum confinement [19][20][21] were designed and developed. For reducing κ, the strategies of nanostructuring, [22][23][24][25] hierarchical architecturing, [26][27][28] and nanoprecipitate inducing [29][30][31] were successfully adopted.Tin selenide (SnSe) is a typical semiconductor with a narrow bandgap of ≈0.9 eV, [32][33][34] making it a good candidate with great potentials for applications in low-cost thermoelectrics. [35][36][37] A remarkable high peak ZT of ≈2.6 at 923 K was reported in the p-type SnSe single crystals, [38] and a relative high ZT of ≈2.2 at 773 K was also achieved from the n-type Bi-doped SnSe single crystals, [39] both along their b-axes. Such high ZT values come from their ultralow κ (both <0.3 W m −1 K −1 at 773 K). [38,39] However, suffered from their poor mechanical properties, rigid crystal growth conditions, and high production cost, SnSe single crystals are difficult to be employed in practical thermoelectric devices, and the techniques used for growing single crystals are limited for repeatable and industrial scale-up. [40] To overcome these challenges, polycrystalline SnSe has become a research topic. To synthesize polycrystalline SnSe, various methods have been explored, such as melting, [40][41][42] arc-melting, [43,44] mechanical alloying, [45][46][47] solid state reaction, [48][49][50] and hydrothermal, [51][52][53] or solvothermal methods. [54,55] To achieve a high ZT, texturing and doping have been two key approaches to enhance S 2 σ and/or reduce κ, from which the ZT values have been improved from 0.1 to ≈1.7 (p-type), although such ZT values are still much lower than their single crystal counterparts due to their relatively high κ and low S 2 σ. [52,[56][57][58][59][60] Considering the requirement of both p-type and n-type thermoelectric materials for composing the thermoelectric In this study, a record high figure of merit (ZT) of ≈1.1 at 773 K is reported in n-type highly distorted Sb-doped SnSe microplates via a facile solvothermal method. The pellets sintered from the Sb-doped SnSe microplates show a high power factor of ≈2.4 µW cm −1 K −2 and an ultralow thermal conductivity of ≈0.17 W m −1 K −1 at 773 K, leading a record high ZT. Such a high power factor is attributed to a high electron concentration of 3.94 × 10 19 cm −3 via Sb-enabled electron doping, and the ultralow thermal conductivity derives from the enhanced phonon scatter...

show abstract

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

Shi

Zheng

Liu

et al. 2018

Advanced Energy Materials

129

View full text Add to dashboard Cite

show abstract

“…Besides carbon-based materials, layered materials have been mixed to improve their thermoelectric properties with other noncarbon additives like metals [162,[200][201][202], semi metals [203], metal alloys [63,[204][205][206][207][208][209], and ceramics [63,198,[210][211][212][213]. One example is the dispersion of silver nanoparticles in the bismuth telluride matrix [200], which improved ZT of the composite approximately three times compared with pristine bismuth telluride.…”

Section: Non-carbon-based Layered Materials Compositesmentioning

confidence: 99%

“…The hierarchical struc-ture causes strong scattering of phonons, which reduces the thermal conductivity and enhances the Seebeck coefficient through the carrier filtering effect. Ju and Kim [213] tried to enhance the thermoelectric performance of p-type SnSe by introducing SiC into the matrix. They found that the formation of the composite improved the power factor and effectively reduced thermal conductivity.…”

Section: Non-carbon-based Layered Materials Compositesmentioning

confidence: 99%

Enhancement of Thermoelectric Properties of Layered Chalcogenide Materials

Alsalama

Hamoudi

Abdala

et al. 2020

Reviews on Advanced Materials Science

View full text Add to dashboard Cite

Thermoelectric materials have long been proven to be effective in converting heat energy into electricity and vice versa. Since semiconductors have been used in the thermoelectric field, much work has been done to improve their efficiency. The interrelation between their thermoelectric physical parameters (Seebeck coefficient, electrical conductivity, and thermal conductivity) required special tailoring in order to get the maximum improvement in their performance. Various approaches have been reported in the research for developing thermoelectric performance, including doping and alloying, nanostructuring, and nanocompositing. Among different types of thermoelectric materials, layered chalcogenide materials are unique materials with distinctive properties. They have low self-thermal conductivity, and their layered structure allows them to be modified easily to improve their thermoelectric performance. In this review, basic knowledge of thermoelectric concepts and challenges for enhancing the figure of merit is provided. It discusses briefly different groups of layered chalcogenide thermoelectric materials with their structure and thermoelectric properties. It also reports different approaches in the literature for improving their performance and the recent progress done in this field. It highlights graphene as a promising nano additive to layered chalcogenide materials’ matrix and shows its effect on enhancing their figure of merit.

show abstract

“…For SnSe thin films and nanosheets, the ZT values have been experimentally found to be relatively low, the maximum value can only reach 0.28 at 675 K 13,14 , and the underlying reasons remain unclear. As a matter of fact, GBs have been found to exist in many 2D materials [15][16][17][18] .…”

Section: Introductionmentioning

confidence: 99%

Enhancing power factor of SnSe sheet with grain boundary by doping germanium or silicon

Sun

Guo

et al. 2020

npj Comput Mater

View full text Add to dashboard Cite

Grain boundaries (GBs) widely exist in two-dimensional (2D) and three-dimensional (3D) materials in experiment, which significantly affect the thermoelectric performance because of the scattering effect on the transport of both electron and phonon. Motivated by the research progress in 3D SnSe, we have systematically studied the GBs in a SnSe monolayer including their stable geometric configurations, the effect of GBs on power factor and Seebeck coefficient, and the strategies to improve the performance by using first principles calculations combined with semiclassical Boltzmann theory. We find that the GBs increase the potential energy barrier of carriers and decrease the valley degeneracy of the conducting bands, leading to the reduction of Seebeck coefficient, as compared to that of the pristine SnSe sheet. We further demonstrate that the trapping gap states are effectively eliminated or reduced by doping germanium or silicon, leading to the enhanced electrical conductivity, power factor, and Seebeck coefficient. These findings shed lights on developing practical strategies for modulating the thermoelectric performance of 2D polycrystalline sheets.

show abstract

Effect of SiC ceramics on thermoelectric properties of SiC/SnSe composites for solid-state thermoelectric applications

Cited by 34 publications

References 31 publications

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

Enhancement of Thermoelectric Properties of Layered Chalcogenide Materials

Enhancing power factor of SnSe sheet with grain boundary by doping germanium or silicon

Contact Info

Product

Resources

About