Effect of Si target sputtering power on diffusion barrier properties of Ta–Si–N thin films

Abstract

Ta-Si-N thin films and Cu/Ta-Si-N thin films were deposited on p type Si(111) substrates by magnetron reactive sputtering. Then the films were characterised by four point probe sheet resistance measurement, AFM, SEM and XRD respectively. According to the XRD results, the authors found that the crystallisation of Ta nitrides in Ta-Si-N/Si thin films is suppressed effectively when fabricated by a high Si target sputtering power. As the Si target power varies, the failure temperature of Cu/Ta-Si-N/Si is changed. The sample fabricated by the Si target power of 200 W fails after 800uC rapid thermal annealing and it has the highest failure temperature. The investigation of failure mechanism shows that Cu atoms diffuse through grain boundaries or amorphous structure of the Ta-Si-N barrier, and react with Si to form Cu-Si phase. And it causes the failure of the barrier.

Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

“…As shown in the formula, the diffusion coefficient is inversely proportional to the diffusion activation energy while the other parameters remain constant. Therefore, a decrease in the diffusion coefficient of Cu atoms in the diffusion barrier films will increase the difficulty of Cu atoms diffusion in the diffusion barrier films [ 42 , 43 ].…”