Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu₂Al₁₀

Effect of 3p- and 5d-electron doping on the Kondo Semiconductor CeFe2Al10

“…This in addition to the weakening of the c-f hybridization gives rise to magnetic ordering in contrast to Si doping. Here it is important to note that the 3p (Si)-and 4d (Rh)-electron doping in CeRu 2 Al 10 play an equivalent role in both the formation of hybridization gap and the unusual AFM ordering [11]. The observed long-range ordered magnetic ground state with Ir substitution rather than the paramagnetic ground state seen with Si substitution could, therefore, be attributed to the combined effect of b axis behavior and weakens strength of the c-f hybridization.…”

“…1(b), respectively. All the samples were single phase except for the sample y = 0.3, containing a small amount of CeAl 0.9 Si 1.1 , which orders ferromagnetically with T C = 11 K [7]. The the lattice parameters and hence unit cell volume of CeFe 2 Al 10−y Si y decreases with increasing y, while the lattice parameters exhibit anomalous changes for CeFe 2−x Ir x Al 10 such that the unit cell volume remains almost unchanged.…”

Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study

“…The magnetic and transport properties of the CeT 2 Al 10 are very susceptible to doping 14,[26][27][28][29][30][31][32][33][34] so that this family is an ideal playground for investigating itinerant versus localized magnetism in a Kondo system. The electron or hole doping with Ir or Re on the transition metal site in Ce(Os 1−x Ir x ) 2 Al 10 or Ce(Os 1−y Re y ) 2 Al 10 has a big influence on the magnetic order and other physical properties: 14,[30][31][32][33][34] The low temperature static susceptibility χ a increases dramatically with increasing Ir concentration (see blue dots in Fig.…”