2015
DOI: 10.1016/j.chemphys.2015.02.014
|View full text |Cite
|
Sign up to set email alerts
|

Effect of shallow traps on admittance spectra of the system carrying SCLC and on values of charge carrier mobility extracted from susceptance

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 17 publications
0
1
0
Order By: Relevance
“…The negative differential susceptance −Δ B varies with frequency f as follows where C is the frequency-dependent capacitance and C geo is the geometric capacitance of the device. The obtained −Δ B vs f curve is expected to exhibit a peak, which defines f p , from which the mobility can be calculated where d is the thickness of the 90F8:10BT layer and V bi is the built-in potential, approximated as the work function difference between the anode and cathode.…”
Section: Resultsmentioning
confidence: 83%
“…The negative differential susceptance −Δ B varies with frequency f as follows where C is the frequency-dependent capacitance and C geo is the geometric capacitance of the device. The obtained −Δ B vs f curve is expected to exhibit a peak, which defines f p , from which the mobility can be calculated where d is the thickness of the 90F8:10BT layer and V bi is the built-in potential, approximated as the work function difference between the anode and cathode.…”
Section: Resultsmentioning
confidence: 83%