Effect of selenium incorporation at precursor stage on growth and properties of Cu2ZnSnSe4 thin films

Nagapure, Dipak Ramdas; Patil, Rhishikesh Mahadev; Mary, G.; Chandra, G. Hema; Sunil, M. Anantha; Subbaiah, Y.P. Venkata; Gupta, Mukul; Rao, R. Prasada

doi:10.1016/j.vacuum.2017.07.014

Cited by 9 publications

(1 citation statement)

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“…The sintered compact thickness decreased linearly with the increased pressure. The powders could be regarded as perfectly elastic bodies and Hooke's law could be applied to the pressing process [24,25]. In this stage, the relative sliding of the particles, including displacement and rearrangement, occurred while the pores between particles diminished.…”

Section: The Densification Trajectory Of the Se-rich Targetmentioning

confidence: 99%

The Formation Mechanism of Cu(In0.7Ga0.3)Se2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Zhang

Jiang

et al. 2018

Crystals

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In this paper, a method to obtain the CuInGaSe 2 (CIGS) absorber layer with an appropriate selenium content is put forward, in which a Se-rich target is used to deposit a CIGS thin-film and this film is annealed in a Se-free inert atmosphere. The key issue of this method is the preparation of a Se-rich target with a homogeneous composition and a high-density. The formation mechanism of CuInSe 2 and CuGaSe 2 is investigated and the results point to the intermediate phase Cu 2−x Se playing a role of a nucleation core. The sintering densification trajectory of the target with the addition of extra selenium is researched. Additionally, an effective way to avoid the sintering defects is proposed. Finally, a conversion efficiency of 11.2% for the CIGS solar cell is reached by sputtering from the obtained Se-rich target.

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Section: The Densification Trajectory Of the Se-rich Targetmentioning

confidence: 99%