Effect of Eu Doping on the Electrical Properties and Energy Storage Performance of PbZrO₃ Antiferroelectric Thin Films

Abstract

Undoped and Eu-doped (1, 3 and 5 mol%) PbZrO 3 (PZ) antiferroelectric (AFE) thin films have been deposited on Pt (111)/ Ti/SiO 2 /Si substrates by a sol-gel method. The effect of Eu doping on phase transformation and energy storage performance of PZ thin films have been investigated in detail. It has been seen that on extent of Eu dopant the Curie temperature and electric field-induced phase transformation can be altered. The energy storage properties have been found to be strongly dependent on Eu doping content. With the increase of Eu contents, recoverable energy storage density has been enhanced followed by their subsequent reduction. A maximum energy density (~18.8 J/cm 3 at~900 kV/cm) and minimum energy loss (~7.3 J/cm 3 ) have been achieved on 3 mol% Eu-doped PZ thin films.

Structure and improved electrical properties of Pr-doped PbZrO3 antiferroelectric thin films with (111) preferential orientation

“…A larger energy density of 16.4 J cm À3 was observed for 1 mol% Pr-doped PZO thin films when the applied electric field was 750 kV cm À1 . This value was also very close to the result of 1 mol% Eu-doped PZO thin films (16.5 J cm À3 at 750 kV cm À1 ) [5,6].…”

“…Some attempts have been made to improve the electrical properties of the PZO thin films by doping different metallic ions, such as rare earth ions, transition metal ions. Correspondingly, the structure and electrical properties of these metallic-ion-doped antiferroelectric thin films of (Pb,La)(Zr,Ti)O 3 [7], (Pb,Ba)ZrO 3 [13], (Pb,Eu)ZrO 3 [6], (Pb,Er)ZrO 3 [14], (Pb,Ce)ZrO 3 [15] have been reported.…”

Designing lead-free antiferroelectrics for energy storage

“…5b we also compare the energy density of BNFO with other previously reported top energy-storage materials—that is, lead-based56333435 and lead-free1011 perovskites—for different experimentally applied E max . We find that, taking BNFO with x =1 and E -field along [001] as a reference, W is about three to four times that of (Pb,La)(Zr,Ti)O 3 (PLZT) films (for E max ∼3 MV cm −1 )56, five times larger than that of Hf x Zr 1− x O 2 films (for E max ∼4.5 MV cm −1 ), and slightly higher than that of BNLBTZ (for E max ∼3.5 MV cm −1 ).…”

Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases

“…For instance, an improved energy storage density of about 14-18 J/cm 3 was obtained in Pr, La, Sr, and Eu-doped PbZrO 3 thin film at room temperature. [16][17][18][19] And a large energy storage density of about 20.3 J/cm 3 at 6500 kV/cm was achieved in terpolymer nanocomposite thick films with 12 wt% of boron nitride nanosheets (BNNSs). 20 Very recently, huge energy densities of 53 and 56 J/cm 3 at about 3500 kV/cm were reported in relaxor AFE (Pb 0.92 La 0.08 )(Zr 0.9 Ti 0.05 )O 3 and (Pb 0.97 La 0.02 )(Zr 0.55 Sn 0.4 Ti 0.05 )O 3 thick films, respectively.…”