Effect of Sb, Tb3+ Doping on Optical and Electrical Performances of SnO2 and Si Based Schottky Diodes

The Investigation of Photovoltaic and Electrical Properties of Bi Doped CTS/Si Hetero-Junction Structure for the Solar Cell Application

“…= 3.36, respectively. The ideality factors of the hetero-junction in both environment conditions have been found to be rather high [34]. The reasons behind it might be referred to the leakage current and dangling-bonds that can occur at the interfaces of the depletion region where the recombination of charge carriers is high due to the existence of defects, traps and interface states formed due to the poor crystalline of Bi doped CTS thin film [11,35,36].…”

Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host’s optical and electrical properties

“…To the best of our knowledge, to date there is no published report on Tb-related light emission from Tb 3+ doped ITO or AZO. In contrast, there are reports on the light emission of RE-doped zinc oxide [33,34], aluminum oxide (Al 2 O 3 ) [35], indium oxide (In 2 O 3 ) [36,37], and tin oxide (SnO 2 ) [38,39]. These materials exhibit an optical transparency suitable for light output from luminescent centers, and a wide bandgap capable of overcoming the thermal quenching effect at room temperature.…”